Patents by Inventor Chunxin Xia

Chunxin Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal oxide semiconductor device and method for manufacturing the same
    Patent number: 11949010
    Abstract: A metal-oxide-semiconductor device can include: a base layer; a source region extending from an upper surface of the base layer to internal portion of the base layer and having a first doping type; a gate structure located on the upper surface of the base layer and at least exposing the source region, and a semiconductor layer located on the upper surface of the base layer and having the first doping type, where the semiconductor layer is used as a partial withstand voltage region of the device, and the source region is located at a first side of the gate structure, the semiconductor layer is located at a second side of the gate structure, and the first side and the second side of the gate structure are opposite to each other.
    Type: Grant
    Filed: September 21, 2021
    Date of Patent: April 2, 2024
    Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
    Inventors: Budong You, Chunxin Xia
  • METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20220102550
    Abstract: A metal-oxide-semiconductor device can include: a base layer; a source region extending from an upper surface of the base layer to internal portion of the base layer and having a first doping type; a gate structure located on the upper surface of the base layer and at least exposing the source region, and a semiconductor layer located on the upper surface of the base layer and having the first doping type, where the semiconductor layer is used as a partial withstand voltage region of the device, and the source region is located at a first side of the gate structure, the semiconductor layer is located at a second side of the gate structure, and the first side and the second side of the gate structure are opposite to each other.
    Type: Application
    Filed: September 21, 2021
    Publication date: March 31, 2022
    Inventors: Budong You, Chunxin Xia