Abstract: A laterally diffused metal oxide semiconductor device and a preparation method thereof are disclosed. The semiconductor device includes: a substrate; a body region having a first conductivity type and formed in the substrate; a drift region, having a second conductivity type, formed in the substrate and adjacent to the body region; a field plate structure, formed on the drift region, a lower surface of an end of the field plate structure close to the body region being flush with the upper surface of the substrate, and the end of the field plate structure close to the body region also having an upwardly extending inclined surface; and a drain region, having a second conductivity type, formed in an upper layer of the drift region, and in contact with the end of the field plate structure away from the body region.

Abstract: The present invention relates to an LDMOS device and a method for preparing same. When a field plate hole is formed by etching an interlayer dielectric layer, the etching of the field plate hole is stopped on a blocking layer by means of providing the blocking layer between a semiconductor base and the interlayer dielectric layer. Since the blocking layer is provided with at least one layer of an etch stop layer, and steps are formed on the surface of the blocking layer, at least two levels of formed hole field plates are distributed in a step shape, and lower ends of the first level of hole field plates to the nth level of hole field plates are gradually further away from the drift area in the direction from a gate structure to a drain area.

Abstract: A semiconductor device and a manufacturing method therefor are disclosed. The method includes: providing a substrate of a first conductivity type; forming doped regions of a second conductivity type in the substrate, the doped regions including adjacent first and second drift regions, wherein the second conductivity type is opposite to the first conductivity type; forming a polysilicon film on the substrate, the polysilicon film covering the doped regions; forming patterned photoresist on the polysilicon film, which covers the first and second drift regions, and in which the polysilicon film above a reserved region for a body region between the first and second drift regions is exposed; and forming the body region of the first conductivity type in the reserved region by performing a high-energy ion implantation process, the body region having a top surface that is flush with top surfaces of the doped regions, the body region having a bottom surface that is not higher than bottom surfaces of the doped regions.

Abstract: Techniques configuring a machine learning model include instantiating a user interface configured to communicate with a machine learning model hosted on a collaborative computing platform. A selection of a file for input to the machine learning model, a selection of content in the file for input to the machine learning model, and instructions for applying the selected content to the machine learning model are received and sent to the machine learning model. A selection of one or more directories and an instruction to apply the machine learning model are sent to the machine learning model.

Abstract: The present invention relates to an LDMOS device and a method for preparing same. When a field plate hole is formed by etching an interlayer dielectric layer, the etching of the field plate hole is stopped on a blocking layer by means of providing the blocking layer between a semiconductor base and the interlayer dielectric layer. Since the blocking layer is provided with at least one layer of an etch stop layer, and steps are formed on the surface of the blocking layer, at least two levels of formed hole field plates are distributed in a step shape, and lower ends of the first level of hole field plates to the nth level of hole field plates are gradually further away from the drift area in the direction from a gate structure to a drain area.

Abstract: Techniques configuring a machine learning model include instantiating a user interface configured to communicate with a machine learning model hosted on a collaborative computing platform. A selection of a file for input to the machine learning model, a selection of content in the file for input to the machine learning model, and instructions for applying the selected content to the machine learning model are received and sent to the machine learning model. A selection of one or more directories and an instruction to apply the machine learning model are sent to the machine learning model.

Abstract: The present document discloses a method for determining a transmission time of a synchronization signal, a terminal, a base station, and a communication system. The method for determining the transmission time of the synchronization signal includes: receiving the synchronization signal; acquiring a time index of the synchronization signal; and determining the transmission time of the synchronization signal according to the time index. The present document also discloses a computer storage medium.

Abstract: The disclosure provides a method for dynamically allocating resource and device, an evolved Node B and User Equipment (UE). Wherein, the method includes that: an evolved Node B acquires resource allocation information of DownLink (DL) data and/or UpLink (UL) data indicated by DL control signaling, wherein the resource allocation information includes positions and number of Resource Allocation Elements (RAEs), the RAEs include N transmission symbols in a time domain, and occupy the whole bandwidth in a frequency domain, or each RAE occupies a Bandwidth Part (BP) in X BPs in the frequency domain, the X BPs forming the frequency domain, N being an integer more than 0 and X being an integer more than 1; and the evolved Node B sends the resource allocation information to UE.