Abstract: A semiconductor structure and manufacturing method thereof are provided. The semiconductor structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a MIM structure, a first contact and a second contact. The MIM structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, and a top electrode layer on the ferroelectric layer. The ferroelectric layer is substantially made of lead zirconate titanate (PZT), BaTiO3 (BTO), or barium strontium titanate (BST), and a thickness of the ferroelectric layer is greater than a thickness of the dielectric layer.

Abstract: The present disclosure provides a semiconductor device and a method for forming a semiconductor device. The semiconductor device includes a substrate, and a first gate dielectric stack over the substrate, wherein the first gate dielectric stack includes a first ferroelectric layer, and a first dielectric layer coupled to the first ferroelectric layer, wherein the first ferroelectric layer includes a first portion made of a ferroelectric material in orthorhombic phase, a second portion made of the ferroelectric material in monoclinic phase, and a third portion made of the ferroelectric material in tetragonal phase, wherein a total volume of the second portion is greater than a total volume of the first portion, and the total volume of the first portion is greater than a total volume of the third portion.

Abstract: A coaxial connector for a mating device to be inserted therein, includes an insulating body having a sustaining portion, a static terminal having a first contact portion, and a movable terminal having a second contact portion for contacting the first contact portion. The sustaining portion and an object below have a gap therebetween. The static terminal and the movable terminal are fixed to the insulating body. An elastic arm is formed by extending from the second contact portion. The sustaining portion engages the elastic arm. When the mating device is inserted into the coaxial connector, the mating device presses the elastic arm downwards, the second contact portion moves downwards to be separated from the first contact portion, and the elastic arm drives the sustaining portion to move downwards together, such that the sustaining portion butts against the object below to prevent the movable terminal from moving downwards excessively.

Abstract: A coaxial connector for a mating device to be inserted therein, includes an insulating body having a sustaining portion, a static terminal having a first contact portion, and a movable terminal having a second contact portion for contacting the first contact portion. The sustaining portion and an object below have a gap therebetween. The static terminal and the movable terminal are fixed to the insulating body. An elastic arm is formed by extending from the second contact portion. The sustaining portion engages the elastic arm. When the mating device is inserted into the coaxial connector, the mating device presses the elastic arm downwards, the second contact portion moves downwards to be separated from the first contact portion, and the elastic arm drives the sustaining portion to move downwards together, such that the sustaining portion butts against the object below to prevent the movable terminal from moving downwards excessively.