Abstract: The present invention relates to a method for forming an optical device. The method includes providing a glass aggregate. Typically, the glass aggregate is a mixture of fine glass soot particles and coarser ground or milled glass powder. The glass particles are mixed with a liquid to form a slurry which is cast in a mold to form a porous pre-form. Subsequently, the porous pre-form is consolidated into a glass object by heating the pre-form at a relatively high temperature. The method of the present invention produces optical components having substantially no striae. As a result, scattering is substantially reduced when EUV light is reflected from a component produced from the optical blank.

Abstract: The invention provides optical projection lithography methods, photolithography photomasks, and optical photolithography mask blanks for use in optical photolithography systems utilizing deep ultraviolet light (DUV) wavelengths below 300 nm, such as DUV projection lithography systems utilizing wavelengths in the 248 nm region and the 193 nm region. The invention provides improved production of lithography patterns by inhibiting polarization mode dispersion of lithography light utilizing low birefringence mask blanks and photomasks.

Abstract: The present invention relates to a method for forming an optical device. The method includes providing a glass aggregate. Typically, the glass aggregate is a mixture of fine glass soot particles and coarser ground or milled glass powder. The glass particles are mixed with a liquid to form a slurry which is cast in a mold to form a porous pre-form. Subsequently, the porous pre-form is consolidated into a glass object by heating the pre-form at a relatively high temperature. The method of the present invention produces optical components having substantially no striae. As a result, scattering is substantially reduced when EUV light is reflected from a component produced from the optical blank.

Abstract: The invention provides optical projection lithography methods, photolithography photomasks, and optical photolithography mask blanks for use in optical photolithography systems utilizing deep ultraviolet light (DUV) wavelengths below 300 nm, such as DUV projection lithography systems utilizing wavelengths in the 248 nm region and the 193 nm region. The invention provides improved production of lithography patterns by inhibiting polarization mode dispersion of lithography light utilizing low birefringence mask blanks and photomasks.

Abstract: The invention provides optical projection lithography methods, photolithography photomasks, and optical photolithography mask blanks for use in optical photolithography systems utilizing deep ultraviolet light (DUV) wavelengths below 300 nm, such as DUV projection lithography systems utilizing wavelengths in the 248 nm region and the 193 nm region. The invention provides improved production of lithography patterns by inhibiting polarization mode dispersion of lithography light utilizing low birefringence mask blanks and photomasks.

Abstract: The invention provides optical projection lithography methods, photolithography photomasks, and optical photolithography mask blanks for use in optical photolithography systems utilizing deep ultraviolet light (DUV) wavelengths below 300 nm, such as DUV projection lithography systems utilizing wavelengths in the 248 nm region and the 193 nm region. The invention provides improved production of lithography patterns by inhibiting polarization mode dispersion of lithography light utilizing low birefringence mask blanks and photomasks.

Abstract: The invention provides optical projection lithography methods, photolithography photomasks, and optical photolithography mask blanks for use in optical photolithography systems utilizing deep ultraviolet light (DUV) wavelengths below 300 nm, such as DUV projection lithography systems utilizing wavelengths in the 248 nm region and the 193 nm region. The invention provides improved production of lithography patterns by inhibiting polarization mode dispersion of lithography light utilizing low birefringence mask blanks and photomasks.

Abstract: A new tungsten compound is formed by reacting ammonium metatungstate with guanidine carbonate. Such a compound can be converted to metallic tungsten, tungsten carbide or oxycarbide, and tungsten nitride or oxynitride. One can also make multiphase composite particles based on molybdenum, tungsten or their compounds (such as carbide or nitride), and at least one other metallic phase, such as cobalt, copper, nickel, iron or silver. The process involves first dispersing particles of a refractory metal or its compounds in a liquid medium, followed by inducing a chemical reaction in the liquid phase to generate a new solid phase which coats or mixes with the dispersed particles. The solid phase includes elements required in the final composite. After removing the liquid phase, the remaining solid is converted by hydrogen reduction into the final products.

Abstract: Bimetallic oxynitrides and nitrides which have catalytic properties comprise two transition metals selected from Groups IIIB to VIII of the Periodic Table of the Elements. Preferably, one metal is either molybdenum or tungsten. The other can be tungsten or molybdenum, respectively, or another transition metal, such as vanadium, niobium, chromium, manganese, cobalt, or nickel. They have a face centered cubic (fcc) arrangement of the metal atoms and have a surface area of no less than about 40 m.sup.2 /gm.