Patents by Inventor CHUNZHOU HU

CHUNZHOU HU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structures and fabrication method thereof
    Patent number: 9305833
    Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a substrate; and forming a conductive layer in one surface of the substrate. The method also includes forming a dielectric layer on the surface of the substrate; and forming an opening exposing a portion of the conductive layer in the dielectric layer. Further, the method includes forming a passivation layer for protecting the portion of the conductive layer on a surface of the portion of the conductive layer on the bottom of the opening using a passivation solution; and cleaning inner surface of the opening using a cleaning solution not reacting with the passivation layer. Further, the method also includes removing the passivation layer; and forming a metal layer connecting with the conductive layer in the opening.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: April 5, 2016
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: Chunzhou Hu
  • SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF
    Publication number: 20150054156
    Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a substrate; and forming a conductive layer in one surface of the substrate. The method also includes forming a dielectric layer on the surface of the substrate; and forming an opening exposing a portion of the conductive layer in the dielectric layer. Further, the method includes forming a passivation layer for protecting the portion of the conductive layer on a surface of the portion of the conductive layer on the bottom of the opening using a passivation solution; and cleaning inner surface of the opening using a cleaning solution not reacting with the passivation layer. Further, the method also includes removing the passivation layer; and forming a metal layer connecting with the conductive layer in the opening.
    Type: Application
    Filed: July 7, 2014
    Publication date: February 26, 2015
    Inventor: CHUNZHOU HU