Patents by Inventor Chuong Anh Tran
Chuong Anh Tran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8835953Abstract: A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm.Type: GrantFiled: March 11, 2010Date of Patent: September 16, 2014Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Trung-Tri Doan, Chuong-Anh Tran
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Publication number: 20140151630Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.Type: ApplicationFiled: December 4, 2012Publication date: June 5, 2014Inventors: Feng-Hsu Fan, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen
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Publication number: 20140051197Abstract: A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a substrate; forming an epitaxial structure on the substrate; forming an electrically insulative insulation layer covering the lateral surfaces of the epitaxial structure; forming an electrically non-conductive material on the electrically insulative insulation layer; and forming a mirror on the p-doped layer, with the electrically insulative insulation layer configured to protect the epitaxial structure during formation of the mirror.Type: ApplicationFiled: October 28, 2013Publication date: February 20, 2014Applicant: SemiLEDS Optoelectronics Co., Ltd.Inventors: FENG-HSU FAN, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen
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Patent number: 8642421Abstract: A light-emitting diode (LED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a surface of the LED is provided. Such LED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional LED structures fabricated without a SixNy layer. Methods for creating such LED structures are also provided.Type: GrantFiled: January 20, 2012Date of Patent: February 4, 2014Assignee: SemiLEDS Optoelectronics Co., Ltd.Inventor: Chuong Anh Tran
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Patent number: 8614449Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: October 11, 2006Date of Patent: December 24, 2013Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Feng-Hsu Fan, Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Jui-Kang Yen
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Patent number: 8552451Abstract: Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.Type: GrantFiled: August 1, 2011Date of Patent: October 8, 2013Assignee: SemiLEDS Optoelectronics Co., Ltd.Inventors: Chuong Anh Tran, Trung Tri Doan
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Publication number: 20130240834Abstract: A method for fabricating vertical light emitting diode (VLED) dice includes the steps of: forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation in a first spectral region; forming a confinement layer on the multiple quantum well (MQW) layer; forming an adhesive layer on the confinement layer; and forming a wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation in the first spectral region to output electromagnetic radiation in a second spectral region.Type: ApplicationFiled: May 14, 2013Publication date: September 19, 2013Applicant: SemiLEDS Optoelectronics Co., Ltd.Inventors: CHUONG ANH TRAN, Trung T. Doan, David Trung Doan
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Patent number: 8319252Abstract: A light emitting device comprises two light-emitting diode (LED) groups, a group of luminophor layers, and an input terminal. The first LED group includes at least one blue LED emitting light having a dominant wavelength in a range between 400 nm and 480 nm, and the second LED group includes at least one red-orange LED emitting light having a dominant wavelength in a range between 610 nm and 630 nm. The group of luminophor layers, which are selected from one of silicates, nitrides, and nitrogen oxides, are positioned above the first LED group and partially converts the light emitted by the first LED group into light having a dominant wavelength in a range between 500 nm and 555 nm. The input terminal is connected to the two LED groups for providing desired electric energy thereto.Type: GrantFiled: January 20, 2010Date of Patent: November 27, 2012Assignee: Semiléds Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Trung Tri Doan, Chuong Anh Tran
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Publication number: 20120119184Abstract: A vertical light emitting diode (VLED) die includes a p-type confinement layer, an active layer on the p-type confinement layer configured to emit light, and an n-type confinement structure having at least one etch stop layer configured to protect the active layer. A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a carrier substrate; forming an n-type confinement structure on the carrier substrate having at least one etch stop layer; forming an active layer on the n-type confinement structure; forming a p-type confinement layer on the active layer; and removing the carrier substrate.Type: ApplicationFiled: November 12, 2010Publication date: May 17, 2012Inventors: Kung-Hsieh Hsu, Yao-Kuo Wang, Wen-Huang Liu, Chuong Anh Tran
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Publication number: 20120112163Abstract: A light-emitting diode (LED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a surface of the LED is provided. Such LED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional LED structures fabricated without a SixNy layer. Methods for creating such LED structures are also provided.Type: ApplicationFiled: January 20, 2012Publication date: May 10, 2012Inventor: CHUONG ANH TRAN
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Patent number: 8143112Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: January 29, 2010Date of Patent: March 27, 2012Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
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Patent number: 8129237Abstract: A vertical light-emitting diode (VLED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a roughened n-doped surface of the VLED are provided. Such VLED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional VLED structures fabricated without a SixNy layer. Methods for creating such VLED structures are also provided.Type: GrantFiled: May 15, 2008Date of Patent: March 6, 2012Assignee: SemiLEDS Optoelectronics Co., Ltd.Inventor: Chuong Anh Tran
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Patent number: 8124454Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: October 11, 2006Date of Patent: February 28, 2012Assignee: SemiLEDS Optoelectronics Co., Ltd.Inventors: Chen-Fu Chu, Trung Tri Doan, Chuong Anh Tran, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
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Publication number: 20110309390Abstract: A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm.Type: ApplicationFiled: March 11, 2010Publication date: December 22, 2011Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.Inventors: Wen-Huang Liu, Trung-Tri Doan, Chuong-Anh Tran
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Publication number: 20110284867Abstract: Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.Type: ApplicationFiled: August 1, 2011Publication date: November 24, 2011Inventors: Chuong Anh Tran, Trung Tri Doan
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Patent number: 8008678Abstract: Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.Type: GrantFiled: July 15, 2008Date of Patent: August 30, 2011Assignee: Semileds CorporationInventors: Chuong Anh Tran, Trung Tri Doan
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Patent number: 7892891Abstract: Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: October 11, 2006Date of Patent: February 22, 2011Assignee: SemiLEDS Optoelectronics Co., Ltd.Inventors: Chen-Fu Chu, Trung Tri Doan, Chuong Anh Tran, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
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Patent number: 7759146Abstract: A method of fabricating ultraviolet (UV) vertical light-emitting diode (VLED) structures composed of AlInGaN or AlGaN with increased crystalline quality and a faster growth rate when compared to conventional AlInGaN or AlGaN LED structures is provided. This may be accomplished by forming a sacrificial GaN layer above a carrier substrate, and then depositing the light-emitting diode (LED) stack above the sacrificial GaN layer. The sacrificial GaN layer may then be removed in subsequent processing steps.Type: GrantFiled: May 4, 2007Date of Patent: July 20, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventor: Chuong Anh Tran
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Patent number: 7723718Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: October 11, 2006Date of Patent: May 25, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
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Patent number: 7687322Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: October 11, 2006Date of Patent: March 30, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen