Abstract: The present disclosure relates to systems, non-transitory computer-readable media, and methods for utilizing machine learning to generate a mask for an object portrayed in a digital image. For example, in some embodiments, the disclosed systems utilize a neural network to generate an image feature representation from the digital image. The disclosed systems can receive a selection input identifying one or more pixels corresponding to the object. In addition, in some implementations, the disclosed systems generate a modified feature representation by integrating the selection input into the image feature representation. Moreover, in one or more embodiments, the disclosed systems utilize an additional neural network to generate a plurality of masking proposals for the object from the modified feature representation. Furthermore, in some embodiments, the disclosed systems utilize a further neural network to generate the mask for the object from the modified feature representation and/or the masking proposals.

Abstract: A system and a method for volume inspection of semiconductor wafers are configured for milling and imaging of reduced number or areas of appropriate cross-sections surfaces in an inspection volume and determining inspection parameters of the 3D objects from the cross-section surface images. The system and method can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.

Abstract: A dual-beam device, such as, a scanning electron microscope combined with a focused-ion beam milling column, is employed for a slice-in-image process. Based on one or more images of at least one cross-section of a test volume of a wafer, a wafer tilt is determined.

Abstract: The present invention relates to a method for measuring a sample with a microscope, the method comprising scanning the sample using a focusing plane having a first angle with respect to a top surface of the sample and computing a confidence distance based on the first angle. The method further comprises selecting at least one among a plurality of alignment markers on the sample for performing a lateral alignment of the scanning step and/or for performing a lateral alignment of an output of the scanning step. In particular, the at least one alignment marker selected at the selecting step is chosen among the alignment markers placed within the confidence distance from an intersection of the focusing plane with the top surface.

Abstract: The present invention relates to a method for measuring a sample with a microscope, the method comprising scanning the sample using a focusing plane having a first angle with respect to a top surface of the sample and computing a confidence distance based on the first angle. The method further comprises selecting at least one among a plurality of alignment markers on the sample for performing a lateral alignment of the scanning step and/or for performing a lateral alignment of an output of the scanning step. In particular, the at least one alignment marker selected at the selecting step is chosen among the alignment markers placed within the confidence distance from an intersection of the focusing plane with the top surface.

Abstract: A dual-beam device, such as, a scanning electron microscope combined with a focused-ion beam milling column, is employed for a slice-in-image process. Based on one or more images of at least one cross-section of a test volume of a wafer, a wafer tilt is determined.

Abstract: The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 ?m below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.

Abstract: Disclosed is a charged particle beam system comprising a charged particle beam column having a charged particle source forming a charged particle beam, an objective lens and a first deflection system for changing a position of impingement of the charged particle beam in a sample plane. The system further comprises a sample chamber comprising a sample stage for holding a sample to be processed, and a controller configured to create and store a height map of a sample surface. The controller is further configured to dynamically adjust the objective lens of the charged particle beam in dependence on a position of impingement of the charged particle beam according to the height map.

Abstract: A cap including a dome portion, wherein one or more panels that form the dome portion and one or more darts define a shape of the dome portion, wherein one or more terminal ends of adjacent panels are coupled by one or more seams and the one or more darts extend along a length of the one or more panels.

Abstract: Disclosed is a charged particle beam system comprising a charged particle beam column having a charged particle source forming a charged particle beam, an objective lens and a first deflection system for changing a position of impingement of the charged particle beam in a sample plane. The system further comprises a sample chamber comprising a sample stage for holding a sample to be processed, and a controller configured to create and store a height map of a sample surface. The controller is further configured to dynamically adjust the objective lens of the charged particle beam in dependence on a position of impingement of the charged particle beam according to the height map.

Abstract: Disclosed is a charged particle beam system comprising a charged particle beam column having a charged particle source forming a charged particle beam, an objective lens and a first deflection system for changing a position of impingement of the charged particle beam in a sample plane. The system further comprises a sample chamber comprising a sample stage for holding a sample to be processed, and a controller configured to create and store a height map of a sample surface. The controller is further configured to dynamically adjust the objective lens of the charged particle beam in dependence on a position of impingement of the charged particle beam according to the height map.

Abstract: A facility is provided which determines the optimum phase of a sample clock signal that is used to acquire a copy of an image containing text. In particular, the phase of the sample signal is set to an initial value and is thereafter incremented by a predetermined amount of time following the acquistion of each of a predetermined number of copies of the image, in which each such copy is defined by respective pixel values. Upon acquiring a current copy of the image, a histogram is formed from ones of the pixel values and is stored in memory in place of a priorly stored histogram if the latest histogram contains more pixel values indicative of text than the priorly stored histogram. The phase of the sample clock signal is then adjusted to the phase associated with the histogram that is stored in memory following the last of such acquisitions.