Patents by Inventor CHU-YUAN CHEN

CHU-YUAN CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240130614
    Abstract: An intraocular pressure inspection device includes an intraocular pressure detection unit, a high-precision positioning system and a wide-area positioning system, wherein according to the position of the intraocular pressure detection unit, a set of high-precision coordinates output by the high-precision positioning system and a set of wide-area coordinates output by the wide-area positioning system are integrated in appropriate weights to obtain a set of more precise integrated coordinate. The above-mentioned intraocular pressure inspection device can prevent the intraocular pressure detection unit from failing to operate once it is not in the working area of the high-precision positioning system.
    Type: Application
    Filed: October 13, 2023
    Publication date: April 25, 2024
    Inventors: Shao Hung HUANG, Chao-Ting CHEN, Fong Hao KUO, Yu-Chung TUNG, Chu-Ming CHENG, Chi-Yuan KANG
  • Publication number: 20230008614
    Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.
    Type: Application
    Filed: July 28, 2022
    Publication date: January 12, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Chuan Chiu, Chia-Hao Chang, Cheng-Chi Chuang, Chih-Hao Wang, Huan-Chieh Su, Chu-Yuan Chen, Li-Zhen Yu, Yu-Ming Lin
  • Publication number: 20110076455
    Abstract: A key includes a preform, a first molded layer formed on a first side surface of the preform by injection molding, and a second molded layer formed on the second side surface by injection molding. The preform, the first molded layer, and the second molded layer cooperatively define a depression. A periphery of the first molded layer forms an assembly portion. A portion of the second layer on the periphery of the first molder layer is substantially parallel to a portion of the ink layer on the periphery of the first molder layer. A method of manufacturing the key is also provided.
    Type: Application
    Filed: November 24, 2009
    Publication date: March 31, 2011
    Applicants: HONG FU JIN PRECISION INDUSTRY (ShenZhen)CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: MING-WU LEE, HAO-DONG XU, CHU-YUAN CHEN, SHOU-FANG ZHONG