Patents by Inventor Chwan-Yang Chang

Chwan-Yang Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190381626
    Abstract: A method for finishing an edge of a glass sheet comprises grinding the edge of the glass sheet with a grinding wheel. The glass sheet includes a first major surface, a second major surface substantially parallel to the first major surface, and the edge connecting the first and second major surfaces. The grinding produces a central edge portion and two chamfered edge portions connecting the central edge portion with the first and second major surfaces, respectively. The method further comprises polishing the central edge portion with at least one cup wheel rotated about a first axis substantially parallel with the first and second major surfaces of the glass sheet to polish the central edge portion, wherein an abrasive layer of the cup wheel comprises at least one of ferric oxide (Fe2O3), silicon carbide (SiC), and ceric oxide (CeO2).
    Type: Application
    Filed: January 24, 2018
    Publication date: December 19, 2019
    Inventors: Chwan-Yang Chang, Ting-Wei Chu, Chi-Cheng Hsu, Cheng-Feng Huang, Shai Negev Shafrir, Yuyin Tang
  • Patent number: 8198112
    Abstract: In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength ?L. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength ?QWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength ?L. The QWI output window is characterized by a photoluminescent wavelength ?PL. The manufacturing process comprises a ?PL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength ?L and the photoluminescent wavelength ?PL of the QWI output window.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: June 12, 2012
    Assignee: Corning Incorporated
    Inventors: Chwan-Yang Chang, Chien-Chih Chen, Martin Hai Hu, Hong Ky Nguyen, Chung-En Zah
  • Publication number: 20110255567
    Abstract: In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength ?L. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength ?QWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength ?L. The QWI output window is characterized by a photoluminescent wavelength ?PL. The manufacturing process comprises a ?PL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength ?L and the photoluminescent wavelength ?PL of the QWI output window.
    Type: Application
    Filed: April 14, 2010
    Publication date: October 20, 2011
    Inventors: Chwan-Yang Chang, Chien-Chih Chen, Martin Hai Hu, Hong Ky Nguyen, Chung-En Zah