Patents by Inventor Chyang J. Yu

Chyang J. Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5004713
    Abstract: Bismuth-containing temperature-stable dielectric ceramics are disclosed herein that are stable over a wide range of frequencies, and thus are suitable for ceramic capacitors and microwave dielectrics. This class of materials is defined by the formula Bi.sub.2 O.sub.3 xTiO.sub.2 wherein x ranges up to 7 and the Ti.sup.4+ ion may be replaced with mixed ions of equivalent charge, thus maintaining charge balance. Suitable replacements for the Ti.sup.4+ ion are: A.sub.1/3.sup.2+ B.sub.2/3.sup.5+, R.sub.2/3.sup.3+ C.sub.1/3.sup.6+, A.sub.1/2.sup.2+ C.sub.1/2.sup.6+, R.sub.1/2.sup.3+ B.sub.1/2.sup.5+, M.sub.1/4.sup.1+ B.sub.3/4.sup.5+, and M.sub.2/5 .sup.1+ C.sub.3/5.sup.6+ ; where M.sup.+ is selected from the group consisting of Li.sup.+, Na.sup.+, K.sup.+, Cu.sup.+, and Ag.sup.+ ; A.sup.2+ is selected from the group consisting of Mg.sup.2+, Zn.sup.2+, Ni.sup.2+ , Co.sup.2+, Cu.sup.2+, and Cd.sup.2+ ; R.sup.3+ is selected from the group consisting of Cr.sup.3+, Mn.sup.3+, Fe.sup.3+, Al.sup.3+, Ga.sup.3+, Zn.sup.
    Type: Grant
    Filed: July 5, 1989
    Date of Patent: April 2, 1991
    Assignee: Corning Incorporated
    Inventors: Pronob Bardhan, Chyang J. Yu
  • Patent number: 4978646
    Abstract: This invention relates to the production of ceramic materials which exhibit a dielectric constant in excess of 105, when measured at room temperature, and a small temperature coefficient of capacitance across the temperature range of -55.degree. to 125.degree. C., when compared to the capacitance measured at room temperature, which material has a composition encompassed within one of the following general formulae:(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m O.sub.3m+1).sup.2- ; (I)(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m Zr.sub..beta. O.sub.3m+.delta.+1).sup.2- ; and (II)(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m Mn.sub..gamma. O.sub.3m+.delta.+1).sup.2- (III)(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m Zr.sub..beta. Mn.sub..gamma. O.sub.3m+.delta.+1).sup.
    Type: Grant
    Filed: March 3, 1989
    Date of Patent: December 18, 1990
    Assignee: Corning Incorporated
    Inventors: Pronob Bardhan, Roger F. Bartholomew, Donald M. Trotter, Jr., Chyang J. Yu
  • Patent number: 4367265
    Abstract: An intergranular insulation type semiconductive ceramic having a high effective dielectric constant includes an electrically insulating dielectric layer situated in the grain boundaries of an alkaline-earth metal titanate, zirconate, or combination thereof. The alkaline-earth metals are barium, strontium, and calcium. The dielectric layer is made of a mixture of bismuth oxide (Bi.sub.2 O.sub.3) and one or more metal oxides from nickel oxide (NiO), alumina (Al.sub.2 O.sub.3), and cuprous oxide (Cu.sub.2 O).
    Type: Grant
    Filed: April 6, 1981
    Date of Patent: January 4, 1983
    Assignee: North American Philips Corporation
    Inventors: Chyang J. Yu, Hem P. Takiar