Patents by Inventor Chyu-Jinh Torng

Chyu-Jinh Torng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bottom electrode for MRAM device
    Patent number: 8969982
    Abstract: A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: March 3, 2015
    Assignee: Headway Technologies, Inc.
    Inventors: Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula, Terry Kin Ting Ko, Wei Cao, Wai-Ming J. Kan, Liubo Hong
  • Process to fabricate bottom electrode for MRAM device
    Patent number: 8273666
    Abstract: Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: September 25, 2012
    Assignee: MagIC Technologies, Inc.
    Inventors: Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula, Terry Kin Ting Ko, Wei Cao, Wai-Ming J. Kan, Liubo Hong
  • Bottom electrode for MRAM device
    Publication number: 20110133300
    Abstract: A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
    Type: Application
    Filed: November 19, 2010
    Publication date: June 9, 2011
    Inventors: Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula, Terry Kin Ting Ko, Wei Cao, Wai-Ming J. Kan, Liubo Hong
  • Process to fabricate bottom electrode for MRAM device
    Publication number: 20110076785
    Abstract: Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
    Type: Application
    Filed: November 19, 2010
    Publication date: March 31, 2011
    Inventors: Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula, Terry Kin Ting Ko, Wei Cao, Wai-Ming J. Kan, Liubo Hong
  • Bottom electrode for MRAM device and method to fabricate it
    Patent number: 7838436
    Abstract: Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: November 23, 2010
    Assignee: MagIC Technologies, Inc.
    Inventors: Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula, Terry Kin Ting Ko, Wei Cao, Wai-Ming J. Kan, Liubo Hong
  • Bottom electrode for MRAM device and method to fabricate it
    Publication number: 20080090307
    Abstract: Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
    Type: Application
    Filed: September 28, 2006
    Publication date: April 17, 2008
    Inventors: Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula, Terry Kin Ting Ko, Wei Cao, Wai-Ming J. Kan, Liubo Hong