Abstract: A semiconductor structure includes a substrate, at least one gate electrode, a plurality of source/drain (S/D) regions, a backside contact, a first dielectric layer, and a conductive via. The at least one gate electrode is disposed in the substrate. The S/D regions is disposed in the substrate and laterally disposed aside the at least one gate electrode. The backside contact is disposed above the S/D regions and the at least one gate electrode. The first dielectric layer is disposed between the backside contact and the plurality of S/D regions and the at least one gate electrode. The conductive via is extended through the first dielectric layer to electrically connect the S/D regions and the backside contact. The conductive via includes an anisotropic transport material or a topological material.

Abstract: A semiconductor device includes a dielectric structure, a conductive structure disposed in the dielectric structure, a first dielectric feature disposed over the dielectric structure, a conductive element disposed in the first dielectric feature and connected to the conductive structure, and a barrier feature disposed around the conductive element and disposed outside of the conductive structure.

Abstract: A semiconductor device includes a substrate and an interconnect layer disposed on the substrate. The interconnect layer includes a dielectric layer and an interconnect extending through the dielectric layer. The interconnect includes a bulk metal region and a single barrier/liner layer, which serves as both a barrier layer and a liner layer and which is disposed to separate the bulk metal region from the dielectric layer.

Abstract: A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes an interconnect structure which includes a topological material. The topological material includes a topological insulator, a topological semimetal, or a combination thereof. A method for manufacturing the semiconductor device is also disclosed.