Patents by Inventor Ciaran Avram Fox

Ciaran Avram Fox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8040131
    Abstract: A method for testing a magnetic head to determine whether the magnetic head is unacceptably affected by temperature variations. The test includes testing the magnetic head at different temperatures and measuring either or both of a signal amplitude and a signal asymmetry of a signal from the magnetic head at the different temperatures. If signal amplitude or signal asymmetry vary excessively as a result of the temperature change then the head can be scrapped.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: October 18, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: David Ernest Call, Ciaran Avram Fox, Jih-Shiuan Luo, Robert Langland Smith, Chin-Yu Yeh
  • Publication number: 20100002327
    Abstract: A method for testing a magnetic head to determine whether the magnetic head is unacceptably affected by temperature variations. The test includes testing the magnetic head at different temperatures and measuring either or both of a signal amplitude and a signal asymmetry of a signal from the magnetic head at the different temperatures. If signal amplitude or signal asymmetry vary excessively as a result of the temperature change then the head can be scrapped.
    Type: Application
    Filed: July 1, 2008
    Publication date: January 7, 2010
    Inventors: David Ernest Call, Ciaran Avram Fox, Jih-Shiuan Luo, Robert Langland Smith, Chin-Yu Yeh
  • Patent number: 7196878
    Abstract: A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.
    Type: Grant
    Filed: February 27, 2004
    Date of Patent: March 27, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Ciaran Avram Fox, Hardayal Singh Gill, Prakash Kasiraj, Wen-Yaung Lee, Mustafa Michael Pinarbasi
  • Patent number: 7138797
    Abstract: A method is disclosed for testing pinned layers of magnetic disk drive read heads having at least one pinned layer, where the magnetic orientation of the pinned layers has been set in an initial direction. The method includes applying a large magnetic test field at a reverse canted reset angle. First test responses from the disk drive read heads are then measured in a small magnetic test field. A large magnetic test field is applied at normal canted reset angle. The disk drive heads are then subjected to a full suite of performance tests in a small magnetic test field to verify their acceptability. These second test responses are then compared to the first test responses to identify read heads having weakly pinned layers.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: November 21, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Ciaran Avram Fox, Kenneth David Mackay, Vladimir Nikitin
  • Patent number: 6795278
    Abstract: Methods and apparatus for protecting read sensors from damage caused by electrostatic discharge (ESD) during manufacturing are described. Two electrical connections are formed and utilized for ESD protection: one primarily for early protection of the sensors (i.e. prior to cutting and lapping the wafer to form the ABS) and the other primarily for later protection of the sensors (i.e. after cutting and lapping the wafer to form the ABS). The first electrical connection is created between the read sensor and the first and second shields, and is severed when the wafer is cut and lapped along the ABS. The second electrical connection is formed between the sensor leads and the first and second shields, and is exposed on an outside surface of the magnetic head. The second electrical connection is severed late in the manufacturing process, preferably by laser-deletion.
    Type: Grant
    Filed: March 28, 2002
    Date of Patent: September 21, 2004
    Assignee: International Business Machines Corporation
    Inventors: James Devereaux Jarrett, Richard Hsiao, Ciaran Avram Fox, Edward Hin Pong Lee, Thomas Robert Albrecht
  • Publication number: 20030184920
    Abstract: Methods and apparatus for protecting read sensors from damage caused by electrostatic discharge (ESD) during manufacturing are described. Two electrical connections are formed and utilized for ESD protection: one primarily for early protection of the sensors (i.e. prior to cutting and lapping the wafer to form the ABS) and the other primarily for later protection of the sensors (i.e. after cutting and lapping the wafer to form the ABS). The first electrical connection is created between the read sensor and the first and second shields, and is severed when the wafer is cut and lapped along the ABS. The second electrical connection is formed between the sensor leads and the first and second shields, and is exposed on an outside surface of the magnetic head. The second electrical connection is severed late in the manufacturing process, preferably by laser-deletion.
    Type: Application
    Filed: March 28, 2002
    Publication date: October 2, 2003
    Inventors: James Devereaux Jarrett, Richard Hsiao, Ciaran Avram Fox, Edward Hin Pong Lee, Thomas Robert Albrecht