Patents by Inventor Ciby T. Thuruthiyil

Ciby T. Thuruthiyil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8275596
    Abstract: According to one exemplary embodiment, a method for robust statistical semiconductor device modeling includes building a semiconductor device model using at least one new device parameter variation, constructing a variation library for the semiconductor device model, and verifying the variation library against measured data from physical semiconductor devices. The variation library is constructed by determining variations of the at least one new device parameter variation and standard device parameters as functions of, for example. sizes and locations of semiconductor devices on semiconductor dies.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: September 25, 2012
    Assignee: Globalfoundries Inc.
    Inventors: Vineet Wason, Jung-Suk Goo, Zhi-Yuan Wu, Ciby T. Thuruthiyil
  • Patent number: 7844927
    Abstract: According to one exemplary embodiment, a method for producing a quality assured semiconductor device model when at least one critical parameter of a semiconductor device process is upgraded includes verifying the quality assured semiconductor device model for consistency against measured data or projected targets. The method further includes verifying the quality assured semiconductor device model for accuracy and consistency when one of a number of critical parameters is varied. The method further includes verifying consistency of the quality assured semiconductor device model against an old semiconductor device model. The method further includes verifying the quality assured semiconductor device model over a range of each of a number of semiconductor device dependencies. The method further includes verifying the quality assured semiconductor device model for digital circuit operation. The method further includes verifying the quality assured semiconductor device model for analog circuit operation.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: November 30, 2010
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Zhi-Yuan Wu, Ali Icel, Judy X. An, Ciby T. Thuruthiyil
  • Publication number: 20080177523
    Abstract: According to one exemplary embodiment, a method for producing a quality assured semiconductor device model when at least one critical parameter of a semiconductor device process is upgraded includes verifying the quality assured semiconductor device model for consistency against measured data or projected targets. The method further includes verifying the quality assured semiconductor device model for accuracy and consistency when one of a number of critical parameters is varied. The method further includes verifying consistency of the quality assured semiconductor device model against an old semiconductor device model. The method further includes verifying the quality assured semiconductor device model over a range of each of a number of semiconductor device dependencies. The method further includes verifying the quality assured semiconductor device model for digital circuit operation. The method further includes verifying the quality assured semiconductor device model for analog circuit operation.
    Type: Application
    Filed: January 19, 2007
    Publication date: July 24, 2008
    Inventors: Zhi-Yuan Wu, Ali Icel, Judy X. An, Ciby T. Thuruthiyil
  • Publication number: 20080141189
    Abstract: According to one exemplary embodiment, a method for robust statistical semiconductor device modeling includes building a semiconductor device model using at least one new device parameter variation, constructing a variation library for the semiconductor device model, and verifying the variation library against measured data from physical semiconductor devices. The variation library is constructed by determining variations of the at least one new device parameter variation and standard device parameters as functions of, for example, sizes and locations of semiconductor devices on semiconductor dies.
    Type: Application
    Filed: December 8, 2006
    Publication date: June 12, 2008
    Inventors: Vineet Wason, Jung-Suk Goo, Zhi-Yuan Wu, Ciby T. Thuruthiyil