Abstract: In one disclosed embodiment, the present test structure for determining gate-to-body current in a floating body FET includes a floating body FET situated over a semiconductor layer, where the floating body FET includes a first gate and first and second source/drain regions. The floating body test structure further includes a second gate and a first contact situated over the first source/drain region. A gate-to-channel current measured between the second gate and the first contact is utilized to determine the gate-to-body tunneling current. The gate-to-body tunneling current can be determined by subtracting the gate-to-channel current from twice a source/drain current of the floating body FET. The test structure may also include a second contact situated on a doped region in the semiconductor layer, where a diode current flow through the doped region determines a body voltage for the floating body FET.

Abstract: In one disclosed embodiment, the present method for determining a gate-to-body current for a floating body FET comprises measuring at least three unique gate-to-body currents corresponding to at least three unique body-tied FET structures, determining at least three unique relationships between the at least three unique gate-to-body currents and at least three gate-to-body current density components for the at least three unique body-tied FET structures, and utilizing those at least three unique relationships to determine the at least three gate-to-body current density components; wherein one of the gate-to-body current density components is used to determine the gate-to-body current for the floating body FET. In one embodiment, a test structure implements a method for determining a gate-to-body current in a floating body FET. The determined gate-to-body current may be used to predict hysteresis in the floating body FET.

Abstract: In one disclosed embodiment, the present test structure for determining gate-to-body current in a floating body FET includes a floating body FET situated over a semiconductor layer, where the floating body FET includes a first gate and first and second source/drain regions. The floating body test structure further includes a second gate and a first contact situated over the first source/drain region. A gate-to-channel current measured between the second gate and the first contact is utilized to determine the gate-to-body tunneling current. The gate-to-body tunneling current can be determined by subtracting the gate-to-channel current from twice a source/drain current of the floating body FET. The test structure may also include a second contact situated on a doped region in the semiconductor layer, where a diode current flow through the doped region determines a body voltage for the floating body FET.

Abstract: In one disclosed embodiment, the present method for determining a gate-to-body current for a floating body FET comprises measuring at least three unique gate-to-body currents corresponding to at least three unique body-tied FET structures, determining at least three unique relationships between the at least three unique gate-to-body currents and at least three gate-to-body current density components for the at least three unique body-tied FET structures, and utilizing those at least three unique relationships to determine the at least three gate-to-body current density components; wherein one of the gate-to-body current density components is used to determine the gate-to-body current for the floating body FET. In one embodiment, a test structure implements a method for determining a gate-to-body current in a floating body FET. The determined gate-to-body current may be used to predict hysteresis in the floating body FET.

Abstract: Real-time analysis and control of a semiconductor silicidation process. The architecture includes system and methods for monitor and control of a silicidation process during rapid thermal anneal. An FTIR system analyzes selected and/or random regions where silicidation is occurring, and signals the process control system to control the process according to the status of the analyzed silicide formations.