Patents by Inventor Cimang LU

Cimang LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BULK FINFET WITH SELF-ALIGNED BOTTOM ISOLATION
    Publication number: 20190157160
    Abstract: Aspects of the disclosure are directed to a semiconductor device. The semiconductor device may include a plurality of fins formed on a semiconductor substrate including a bulk semiconductor material, a plurality of shallow trench isolation (STI) trenches formed between the plurality of fins, a hardmask formed around the plurality of fins, and a plurality of fin bottom portions formed below the plurality of fins.
    Type: Application
    Filed: November 20, 2017
    Publication date: May 23, 2019
    Inventors: Cimang LU, Stanley Seungchul SONG, Periannan CHIDAMBARAM
  • Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure
    Patent number: 9722026
    Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 ?m square area of the upper surface of the germanium layer is 0.7 nm or less.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: August 1, 2017
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akira Toriumi, Toshiyuki Tabata, Choong Hyun Lee, Tomonori Nishimura, Cimang Lu
  • SEMICONDUCTOR STRUCTURE IN WHICH FILM INCLUDING GERMANIUM OXIDE IS PROVIDED ON GERMANIUM LAYER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
    Publication number: 20160218182
    Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 ?m square area of the upper surface of the germanium layer is 0.7 nm or less.
    Type: Application
    Filed: June 6, 2014
    Publication date: July 28, 2016
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Akira TORIUMI, Toshiyuki TABATA, Choong Hyun LEE, Tomonori NISHIMURA, Cimang LU