Patents by Inventor Cindy Huichun Shu

Cindy Huichun Shu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PRE-CUTTING A BACK SIDE OF A SILICON SUBSTRATE FOR GROWING BETTER III-V GROUP COMPOUND LAYER ON A FRONT SIDE OF THE SUBSTRATE
    Publication number: 20150171266
    Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).
    Type: Application
    Filed: February 25, 2015
    Publication date: June 18, 2015
    Inventors: Zhen-Yu Li, Chung-Pao Lin, Hsing-Kuo Hsia, Hao-Chung Kuo, Cindy Huichun Shu, Hsin-Chieh Huang
  • Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate
    Patent number: 8981534
    Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 17, 2015
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Zhen-Yu Li, Chung-Pao Lin, Hsing-Kuo Hsia, Hao-Chung Kuo, Cindy Huichun Shu, Hsin-Chieh Huang
  • Pre-Cutting a Back Side of a Silicon Substrate for Growing Better III-V Group Compound Layer on a Front Side of the Substrate
    Publication number: 20140077224
    Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Applicant: TSMC Solid State Lighting Ltd.
    Inventors: Zhen-Yu Li, Chung-Pao Lin, Hsing-Kuo Hsia, Hao-Chung Kuo, Cindy Huichun Shu, Hsin-Chieh Huang