Patents by Inventor Cindy Muir

Cindy Muir has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stacked metal inductor
    Patent number: 10854372
    Abstract: An inductor has a conductor layer formed by multiple concentric co-planar turns of a first metal layer (e.g., ultra-thick metal (UTM)) adapted to receive current at a frequency of at least one gigahertz. The multiple turns of the first metal layer proceed from an innermost turn to an outermost turn, and a stacking layer of a second metal is provided over each of the first metal layer turns except at least the innermost turn, thereby optimizing the Q of the inductor.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: December 1, 2020
    Assignee: Intel IP Corporation
    Inventors: Chi-Taou Robert Tsai, Lillian G. Lent, Curtiss D. Roberts, Cindy Muir
  • STACKED METAL INDUCTOR
    Publication number: 20190088405
    Abstract: An inductor has a conductor layer formed by multiple concentric co-planar turns of a first metal layer (e.g., ultra-thick metal (UTM)) adapted to receive current at a frequency of at least one gigahertz. The multiple turns of the first metal layer proceed from an innermost turn to an outermost turn, and a stacking layer of a second metal is provided over each of the first metal layer turns except at least the innermost turn, thereby optimizing the Q of the inductor.
    Type: Application
    Filed: November 15, 2018
    Publication date: March 21, 2019
    Inventors: Chi-Taou Robert Tsai, Lillian G. Lent, Curtiss D. Roberts, Cindy Muir
  • Stacked metal inductor
    Patent number: 10199157
    Abstract: An inductor has a conductor layer formed by multiple concentric co-planar turns of ultra-thick metal (UTM) adapted to receive current at a frequency of at least one gigahertz. The multiple turns of UTM proceed from an innermost turn to an outermost turn, and aluminum stacking is provided over all of the UTM turns except at least the innermost turn, thereby optimizing the Q of the inductor.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: February 5, 2019
    Assignee: Intel IP Corporation
    Inventors: Chi-Taou Robert Tsai, Lillian Lent, Curtiss Roberts, Cindy Muir
  • STACKED METAL INDUCTOR
    Publication number: 20180096779
    Abstract: An inductor has a conductor layer formed by multiple concentric co-planar turns of ultra-thick metal (UTM) adapted to receive current at a frequency of at least one gigahertz. The multiple turns of UTM proceed from an innermost turn to an outermost turn, and aluminum stacking is provided over all of the UTM turns except at least the innermost turn, thereby optimizing the Q of the inductor.
    Type: Application
    Filed: September 30, 2016
    Publication date: April 5, 2018
    Inventors: Chi-Taou Robert Tsai, Lillian Lent, Curtiss Roberts, Cindy Muir