Abstract: Novel fabrication methods implement the use of dummy tiles to avoid the effects of in-line charging, ESD events, and such charge effects in the formation of a memory device region region. One method involves forming at least a portion of a memory core array upon a semiconductor substrate that involves forming STI structures in the substrate substantially surrounding a memory device region region within the array. An oxide layer is formed over the substrate in the memory device region region and over the STI's, wherein an inner section of the oxide layer formed over the memory device region region is thicker than an outer section of the oxide layer formed over the STI's. A first polysilicon layer is then formed over the inner and outer sections comprising one or more dummy tiles formed over one or more outer sections and electrically connected to at least one inner section.

Abstract: The present invention pertains to a system and method for implementing dummy tiles in forming a memory device. The system and method involves forming at least a portion of a memory core array upon a semiconductor substrate comprising, forming STI structures in the substrate, depositing an oxide layer over the substrate, forming a first polysilicon layer over the oxide layer, doping the first polysilicon layer, forming a second polysilicon layer over the first polysilicon layer, patterning at least one memory core, patterning at least one dummy tile and performing back end processing.

Abstract: According to one exemplary embodiment, a structure in a semiconductor die comprises a metal pad situated in an interconnect metal layer, where the metal pad comprises copper. The structure further comprises an interlayer dielectric layer situated over the metal pad. The structure further comprises a terminal via defined in the interlayer dielectric layer, where the terminal via is situated on the metal pad. The terminal via extends along only one side of the metal pad. The structure further comprises a terminal metal layer situated on the interlayer dielectric layer and in the terminal via. The structure further comprises a dielectric liner situated on the terminal metal layer, where a bond pad opening is defined in the dielectric liner, and where the bond pad opening exposes a portion of the terminal metal layer. The interlayer dielectric layer is situated between the exposed portion of the terminal metal layer and metal pad.