Patents by Inventor Cinzia Perrone

Cinzia Perrone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9748480
    Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: August 29, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Redaelli, Cinzia Perrone
  • Publication number: 20170025606
    Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
    Type: Application
    Filed: October 6, 2016
    Publication date: January 26, 2017
    Inventors: Andrea Redaelli, Cinzia Perrone
  • Patent number: 9490425
    Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: November 8, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Redaelli, Cinzia Perrone
  • Patent number: 9343671
    Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.
    Type: Grant
    Filed: January 19, 2015
    Date of Patent: May 17, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Redaelli, Giorgio Servalli, Pietro Petruzza, Cinzia Perrone
  • Patent number: 9245927
    Abstract: Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: January 26, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Cinzia Perrone
  • Publication number: 20150200366
    Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.
    Type: Application
    Filed: January 19, 2015
    Publication date: July 16, 2015
    Inventors: Andrea Redaelli, Giorgio Servalli, Pietro Petruzza, Cinzia Perrone
  • Patent number: 8962384
    Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: February 24, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Redaelli, Giorgio Servalli, Pietro Petruzza, Cinzia Perrone
  • Publication number: 20150001461
    Abstract: Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.
    Type: Application
    Filed: September 18, 2014
    Publication date: January 1, 2015
    Inventors: Fabio Pellizzer, Cinzia Perrone
  • Publication number: 20140319447
    Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
    Type: Application
    Filed: July 3, 2014
    Publication date: October 30, 2014
    Inventors: Andrea Redaelli, Cinzia Perrone
  • Patent number: 8853665
    Abstract: Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: October 7, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Cinzia Perrone
  • Patent number: 8803118
    Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: August 12, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Redaelli, Cinzia Perrone
  • Patent number: 8759143
    Abstract: Some embodiments include methods of forming semiconductor constructions. Carbon-containing material is formed over oxygen-sensitive material. The carbon-containing material and oxygen-sensitive material together form a structure having a sidewall that extends along both the carbon-containing material and the oxygen-sensitive material. First protective material is formed along the sidewall. The first protective material extends across an interface of the carbon-containing material and the oxygen-sensitive material, and does not extend to a top region of the carbon-containing material. Second protective material is formed across the top of the carbon-containing material, with the second protective material having a common composition to the first protective material. The second protective material is etched to expose an upper surface of the carbon-containing material. Some embodiments include semiconductor constructions, memory arrays and methods of forming memory arrays.
    Type: Grant
    Filed: February 5, 2014
    Date of Patent: June 24, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pelizzer, Cinzia Perrone
  • Publication number: 20140154861
    Abstract: Some embodiments include methods of forming semiconductor constructions. Carbon-containing material is formed over oxygen-sensitive material. The carbon-containing material and oxygen-sensitive material together form a structure having a sidewall that extends along both the carbon-containing material and the oxygen-sensitive material. First protective material is formed along the sidewall. The first protective material extends across an interface of the carbon-containing material and the oxygen-sensitive material, and does not extend to a top region of the carbon-containing material. Second protective material is formed across the top of the carbon-containing material, with the second protective material having a common composition to the first protective material. The second protective material is etched to expose an upper surface of the carbon-containing material. Some embodiments include semiconductor constructions, memory arrays and methods of forming memory arrays.
    Type: Application
    Filed: February 5, 2014
    Publication date: June 5, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Cinzia Perrone
  • Patent number: 8686394
    Abstract: Some embodiments include methods of forming semiconductor constructions. Carbon-containing material is formed over oxygen-sensitive material. The carbon-containing material and oxygen-sensitive material together form a structure having a sidewall that extends along both the carbon-containing material and the oxygen-sensitive material. First protective material is formed along the sidewall. The first protective material extends across an interface of the carbon-containing material and the oxygen-sensitive material, and does not extend to a top region of the carbon-containing material. Second protective material is formed across the top of the carbon-containing material, with the second protective material having a common composition to the first protective material. The second protective material is etched to expose an upper surface of the carbon-containing material. Some embodiments include semiconductor constructions, memory arrays and methods of forming memory arrays.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: April 1, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Cinzia Perrone
  • Publication number: 20140021439
    Abstract: Some embodiments include methods of forming semiconductor constructions. Carbon-containing material is formed over oxygen-sensitive material. The carbon-containing material and oxygen-sensitive material together form a structure having a sidewall that extends along both the carbon-containing material and the oxygen-sensitive material. First protective material is formed along the sidewall. The first protective material extends across an interface of the carbon-containing material and the oxygen-sensitive material, and does not extend to a top region of the carbon-containing material. Second protective material is formed across the top of the carbon-containing material, with the second protective material having a common composition to the first protective material. The second protective material is etched to expose an upper surface of the carbon-containing material. Some embodiments include semiconductor constructions, memory arrays and methods of forming memory arrays.
    Type: Application
    Filed: July 18, 2012
    Publication date: January 23, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Cinzia Perrone
  • Publication number: 20140021431
    Abstract: Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.
    Type: Application
    Filed: July 18, 2012
    Publication date: January 23, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Fabio Pellizzer, Cinzia Perrone
  • Publication number: 20130320288
    Abstract: Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
    Type: Application
    Filed: May 29, 2012
    Publication date: December 5, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Andrea Redaelli, Cinzia Perrone
  • Publication number: 20130187120
    Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.
    Type: Application
    Filed: January 20, 2012
    Publication date: July 25, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Andrea Redaelli, Giorgio Servalli, Pietro Petruzza, Cinzia Perrone