Abstract: An image sensor including a plurality of pixels divided into elementary groups, each elementary group including a plurality of adjacent pixels arranged in a matrix, in rows and columns, each elementary group including first pixels, second and third visible image pixels sensitive in different wavelength ranges and fourth depth image pixels, wherein each row of each elementary group includes at least a fourth pixel.

Abstract: A device for acquiring a 2D image and a depth image, including: a first sensor formed in and on a first semiconductor substrate and including regions of a material distinct from that of the substrate located in an interconnect stack in line with 2D image pixels of the first r sensor; and adjoining the first sensor, a second sensor formed in and on a second semiconductor substrate and including a plurality of depth pixels located opposite the regions of the first sensor, wherein each region includes a first portion having, in top view, a smaller surface area than that of a second portion, the material of the regions having an optical index greater than or equal to that of the material of the substrate.