Patents by Inventor Clément Gaumer

Clément Gaumer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming the gate insulator of a MOS transistor
    Patent number: 8802575
    Abstract: A method for forming the gate insulator of a MOS transistor, including the steps of: a) forming a thin silicon oxide layer at the surface of a semiconductor substrate; b) incorporating nitrogen atoms into the silicon oxide layer by plasma nitridation at a temperature lower than 200° C., to transform this layer into a silicon oxynitride layer; and c) coating the silicon oxynitride layer with a layer of a material of high dielectric constant, wherein steps b) and c) follow each other with no intermediate anneal step.
    Type: Grant
    Filed: April 10, 2012
    Date of Patent: August 12, 2014
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Olivier Gourhant, David Barge, Clément Gaumer, Mickaël Gros-Jean
  • METHOD FOR FORMING THE GATE INSULATOR OF A MOS TRANSISTOR
    Publication number: 20120270410
    Abstract: A method for forming the gate insulator of a MOS transistor, including the steps of: a) forming a thin silicon oxide layer at the surface of a semiconductor substrate; b) incorporating nitrogen atoms into the silicon oxide layer by plasma nitridation at a temperature lower than 200° C., to transform this layer into a silicon oxynitride layer; and c) coating the silicon oxynitride layer with a layer of a material of high dielectric constant, wherein steps b) and c) follow each other with no intermediate anneal step.
    Type: Application
    Filed: April 10, 2012
    Publication date: October 25, 2012
    Inventors: Olivier Gourhant, David Barge, Clément Gaumer, Mickaël Gros-Jean