Abstract: A device including a first portion, a second portion, a first contact and a second contact, the first portion being made of a semiconductor having a first doping, the second portion being made of a semiconductor having a second doping different than the first, the first portion and the second portion forming a p/n junction including a depletion zone in the first portion, the contacts being configured so that when an electric voltage (V1) is applied between the contacts, a dimension of the depletion zone depends on a value of the electric voltage, an ionization energy being defined for dopants of the second portion. The device includes an emitter generating a radiation having an energy greater than the ionization energy and illuminating the second portion with the radiation.

Abstract: A microelectrode (2) for neural interfacing applications comprises a first substrate layer (4), a second attachment layer (6), and a third layer (8) forming the active part of the electrode (2) of which the material consists of synthetic diamond made in electrically conductive by doping with atoms chosen from boron, nitrogen and phosphorus atoms. The material of the third layer (8) is a textured material that comprises a compact assembly, in the form of a brush, of tubes (26) each comprising, in the form of at in least one peripheral outer layer, polycrystalline diamond made electrically conductive by doping. The tubes (26) are separated from each other at the first fixed ends (28) of same and project the free ends (30) of same away from the first and second layers (4, 6) in a direction that is substantially vertical relative to the extension plane (20) of the second layer (6). A method for producing said microelectrode is also described.