Abstract: An electronic chip including a substrate and, on the side of one face of the substrate, a metal pad intended to receive a soldering material, the pad including, in order from said face of the substrate, a first metal layer, an electrically conductive barrier layer, and a second metal layer, wherein an electrically insulating barrier layer is arranged on, and in contact with, the sidewall of the first metal layer over the entire periphery of the metal pad.

Abstract: A method for manufacturing a photodetection device, which includes the following steps: making a cadmium-rich structured coating, over a substrate of CdxHg1-xTe, and using a first etching mask; etching to enlarge the through openings of the first etching mask or the through openings of an interlayer etched with the structured coating, so as to form a second etching mask; injecting acceptor doping elements into the substrate, throughout the second etching mask, and activating and diffusing the acceptor doping elements to form at least one P doped region in the semiconductor substrate; selective interdiffusion annealing of cadmium, so as to form in each P doped region a cadmium-rich concentrated well with a cadmium concentration lateral gradient; and making at least one electrical contact pad, at each through opening in the structured coating.

Abstract: Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentration in the N-doped region. According to the invention, the concentrated casing (150) has a cadmium concentration gradient, defining therein at least one intermediate gap zone (151) and at least one high gap zone (152), and the intermediate gap zone (151) is in direct physical contact with an electrical contact block (170). A significant reduction in the dark current and an optimal charge carrier collection are thus combined.

Abstract: A photodetection device including a pixel matrix, each of the pixels including a photodiode, the absorption region of which extends entirely or almost entirely inside a volume surrounding a central region of the pixel; and a focusing element. An assembly of focusing elements is composed of refractive structures, each formed by a first truncated pyramid with a recess in the shape of a second inverted pyramid. The angles ?i at the base of the pyramids satisfy the following relation: 2 * ? i - sin - 1 ? ( n 0 n 1 ? ? sin ? ( ? i ) ) < ? 2 wherein n0 is the optical index of a medium surrounding the refractive structures on the side opposite the photodiodes, and n1 is an optical index of the refractive structures.

Abstract: Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentration in the N-doped region. According to the invention, the concentrated casing (150) has a cadmium concentration gradient, defining therein at least one intermediate gap zone (151) and at least one high gap zone (152), and the intermediate gap zone (151) is in direct physical contact with an electrical contact block (170). A significant reduction in the dark current and an optimal charge carrier collection are thus combined.

Abstract: A photodetection device including a pixels matrix, each of the pixels including a photodiode, the absorption region of which extends entirely or almost entirely inside a volume surrounding a central region of the pixel; and a focusing element. The assembly of focusing elements is composed of refractive structures, each formed by a first truncated pyramid with a recess in the shape of a second inverted pyramid. The angles at the base of the pyramids satisfy the following relation: 2 * ? i - sin - 1 ? ( n 0 n 1 ? ? sin ? ( ? i ) ) < ? 2 wherein n0 is the optical index of a medium surrounding the refractive structures on the side opposite the photodiodes, and n1 is an optical index of the refractive structures.

Abstract: The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).

Abstract: The invention pertains to a process for producing an array (1) of mesa-structured photodiodes (2), including at least the following steps: a) producing a useful layer (3); b) producing an etch mask formed of a plurality of etch pads (20); c) wet-etching part of the useful layer (3) located between the etch pads (20), forming a plurality of mesa-structured photodiodes (2), producing a recess (21); d) conformally depositing a passivation layer (14); e) removing the etch pads (20) by chemical dissolution; f) producing conductive pads (11).