Patents by Inventor Claes Thelander
Claes Thelander has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10822189Abstract: The invention relates to a method of threading a fibrous web (W) onto a circular cylindrical object (3, 19) in a reel-up (2) for a paper-making machine (1). The reel-up (2) comprises an endless flexible belt (6) mounted for rotation along a predetermined path of travel. The endless flexible belt (6) is positioned adjacent the circular cylindrical object (3, 19) during winding and the fibrous web (W) residing on the outside surface (8) to engage the circular cylindrical object (3, 19) during winding such that the endless flexible belt (6) is deflected from the predetermined path of travel. When a fibrous web (W) is to be threaded onto the circular cylindrical object (3, 19), the circular cylindrical object (3, 19) is placed at a distance from the endless flexible belt (6) such that the endless flexible belt (6) is no longer deflected from the its path of travel.Type: GrantFiled: March 8, 2018Date of Patent: November 3, 2020Assignee: VALMET AKTIEBOLAGInventors: Per-Olof Malmqvist, Lars Gustafsson, Claes Thelander, Tomas Carlsson
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Publication number: 20200148494Abstract: The invention relates to a method of threading a fibrous web (W) onto a circular cylindrical object (3, 19) in a reel-up (2) for a paper-making machine (1). The reel-up (2) comprises an endless flexible belt (6) mounted for rotation along a predetermined path of travel. The endless flexible belt (6) is positioned adjacent the circular cylindrical object (3, 19) during winding and the fibrous web (W) residing on the outside surface (8) to engage the circular cylindrical object (3, 19) during winding such that the endless flexible belt (6) is deflected from the predetermined path of travel. When a fibrous web (W) is to be threaded onto the circular cylindrical object (3, 19), the circular cylindrical object (3, 19) is placed at a distance from the endless flexible belt (6) such that the endless flexible belt (6) is no longer deflected from the its path of travel.Type: ApplicationFiled: March 8, 2018Publication date: May 14, 2020Inventors: Per-Olof MALMQVIST, Lars GUSTAFSSON, Claes THELANDER, Tomas CARLSSON
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Patent number: 10090292Abstract: A radial nanowire Esaki diode device includes a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type. The device may be a TFET or a solar cell.Type: GrantFiled: July 5, 2013Date of Patent: October 2, 2018Assignee: QUNANO ABInventors: Lars-Erik Wernersson, Erik Lind, Jonas Ohlsson, Lars Samuelson, Mikeal Bjork, Claes Thelander, Anil Dey
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Publication number: 20150171076Abstract: A radial nanowire Esaki diode device includes a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type. The device may be a TFET or a solar cell.Type: ApplicationFiled: July 5, 2013Publication date: June 18, 2015Inventors: Lars-Erik Wernersson, Erik Lind, Jonas Ohlsson, Lars Samuelson, Mikeal Bjork, Claes Thelander, Anil Dey
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Patent number: 8212237Abstract: The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire (3) forming a current transport channel, one or more shell layers (4) arranged around at least a portion of the nanowire (3), and nano-sized charge trapping centers (10) embedded in said one or more shell layers (4), and one or more gate electrodes (14) arranged around at least a respective portion of said one or more shell layers (4). Preferably said one or more shell layers (4) are made of a wide band gap material or an insulator. The charge trapping centers (10) may be charged/written by using said one or more gate electrodes (14) and a change in an amount of charge stored in one or more of the charge trapping centers (10) alters the conductivity of the nanowire (3).Type: GrantFiled: July 2, 2009Date of Patent: July 3, 2012Assignee: QuNano ABInventors: Lars Samuelson, Claes Thelander, Jonas Ohlsson, Anders Mikkelsen
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Patent number: 8143658Abstract: The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to the invention the device comprise a first nanowire with a first wrap gate arranged around a portion of its length, and a charge storing terminal connected to one end, and a second nanowire with a second wrap gate arranged around a portion of its length. The charge storing terminal is connected to the second wrap gate, whereby a charge stored on the charge storing terminal can affect a current in the second nanowire. The current can be related to written (charged) or unwritten (no charge) state, and hence a memory function is established.Type: GrantFiled: March 26, 2008Date of Patent: March 27, 2012Assignee: QuNano ABInventors: Lars Samuelson, Claes Thelander
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Patent number: 8063450Abstract: The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic.Type: GrantFiled: September 19, 2007Date of Patent: November 22, 2011Assignee: QuNano ABInventors: Lars-Erik Wernersson, Erik Lind, Tomas Bryllert, Jonas Ohlsson, Truls Löwgren, Lars Samuelson, Claes Thelander
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Publication number: 20110204331Abstract: The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to the invention the device comprise a first nanowire with a first wrap gate arranged around a portion of its length, and a charge storing terminal connected to one end, and a second nanowire with a second wrap gate arranged around a portion of its length. The charge storing terminal is connected to the second wrap gate, whereby a charge stored on the charge storing terminal can affect a current in the second nanowire. The current can be related to written (charged) or unwritten (no charge) state, and hence a memory function is established.Type: ApplicationFiled: March 26, 2008Publication date: August 25, 2011Inventors: Lars Samuelson, Claes Thelander
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Publication number: 20110140086Abstract: The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire (3) forming a current transport channel, one or more shell layers (4) arranged around at least a portion of the nanowire (3), and nano-sized charge trapping centres (10) embedded in said one or more shell layers (4), and one or more gate electrodes (14) arranged around at least a respective portion of said one or more shell layers (4). Preferably said one or more shell layers (4) are made of a wide band gap material or an insulator. The charge trapping centres (10) may be charged/written by using said one or more gate electrodes (14) and a change in an amount of charge stored in one or more of the charge trapping centres (10) alters the conductivity of the nanowire (3).Type: ApplicationFiled: July 2, 2009Publication date: June 16, 2011Applicant: QuNano ABInventors: Lars Samuelson, Claes Thelander, Jonas Ohlsson, Anders Mikkelsen
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Patent number: 7826336Abstract: The present invention relates to a device for data storage. In particular the invention relates to a single electron memory device utilizing multiple tunnel junctions, and arrays or matrixes of such devices. The data storage device according to the invention comprises at least one nanowhisker adapted to store a charge. Each of the nanowhiskers comprises a sequence of axial segments of materials of different band gaps, arranged to provide a sequence of conductive islands separated by tunnel barriers and a storage island arranged at one end of the conductive island/tunnel barrier sequence, whereby to provide a data storage capability. The number of conductive islands should preferably be between five and ten.Type: GrantFiled: February 23, 2006Date of Patent: November 2, 2010Assignee: QuNano ABInventors: Claes Thelander, Lars Samuelson
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Publication number: 20100176459Abstract: The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic.Type: ApplicationFiled: September 19, 2007Publication date: July 15, 2010Inventors: Lars-Erik Wernersson, Erik Lind, Tomas Bryllert, Jonas Ohlsson, Truls Löwgren, Lars Samuelson, Claes Thelander
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Publication number: 20070206488Abstract: The present invention relates to a device for data storage. In particular the invention relates to a single electron memory device utilizing multiple tunnel junctions, and arrays or matrixes of such devices. The data storage device according to the invention comprises at least one nanowhisker adapted to store a charge. Each of the nanowhiskers comprises a sequence of axial segments of materials of different band gaps, arranged to provide a sequence of conductive islands separated by tunnel barriers and a storage island arranged at one end of the conductive island/tunnel barrier sequence, whereby to provide a data storage capability. The number of conductive islands should preferably be between five and ten.Type: ApplicationFiled: February 23, 2006Publication date: September 6, 2007Inventors: Claes Thelander, Lars Samuelson