Abstract: A method and an apparatus of a magnetic field sensor structure are disclosed. The magnetic field sensor structure is formed by a bridge of four magnetoresistors (1–4), wherein each magnetoresistor has a longitudinal direction, and each magnetoresistor (1–4) is polarised by magnets (15–19). Also, each magnet has a main magnetisation field along an axial magnetisation direction, and a magnetic leakage field. The polarisation magnets (15–19) and the magnetoresistors (1–4) are arranged in the form of layers on the same substrate. In one embodiment, the polarisation magnets (15–19) are at the same level as the magnetoresistors (1–4) wherein the polarisation magnets (15–19) have the same main magnetisation direction, which is contained in the plane of the layers. The magnetoresistors have their longitudinal direction parallel with that of the axial direction of the magnets. In one embodiment, two magnetoresistors are arranged in the axial field of magnets and two others are in the magnet leakage field.

Abstract: Magnetic field sensor structure formed by a bridge of four magnetoresistors (1-4) each having a longitudinal direction, each magnetoresistor (1-4) being polarised by magnets (15-19) each having a main magnetisation field along an axial magnetisation direction, and a magnetic leakage field, the polarisation magnets (15-19) and the magnetoresistors (1-4) being arranged in the form of layers on the same substrate, characterised in that the polarisation magnet(s) (15-19) are at the same level as the magnetoresistors (1-4), in that all the polarisation magnets (15-19) have the same main magnetisation direction contained in the plane of the layers and in that the magnetoresistors have their longitudinal direction parallel with that of the axial direction of the magnets, two magnetoresistors being arranged in the axial field of magnets and two others in the magnet leakage field.