Abstract: A method for manufacturing a microelectronic device is provided, including forming a first semiconductor material layer on a first region of a top surface of a substrate; and forming a second semiconductor material layer on a second region of the top surface of the substrate distinct from the first region, forming a first metallic layer above the first layer; forming a first contact layer of a first intermetallic compound or solid solution; forming a first sacrificial layer in an upper portion of the first contact layer; forming a second sacrificial layer in an upper portion of the second layer; removing all of the second sacrificial layer so as to expose a residual portion of the second layer; partially removing the first sacrificial layer; forming a second metallic layer above said residual portion; and forming a second contact layer of a second intermetallic compound or solid solution.

Abstract: The invention relates to a method for manufacturing a microelectronic device comprising, on the base of a substrate: a formation of a first layer of a first semiconductor material on a first region of a top surface of the substrate; a formation of a second layer of a second semiconductor material, on a second region, distinct from the first region, of the top surface of the substrate; it comprises, after the formation of a second layer: a formation of a first metallic layer above the first layer; a formation of a first contact layer of a first intermetallic compound or solid solution comprising at least one portion of the first layer and at least one portion of the first metallic layer; a formation of a first sacrificial layer by oxidation, over a thickness e1, of an upper portion of the first contact layer, and the formation of a second sacrificial layer by oxidation, over a thickness e2, of an upper portion of the second layer; removal of the whole of the second sacrificial layer so as to expose a residu