Patents by Inventor Claire J. Carmalt

Claire J. Carmalt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition process
    Patent number: 10513773
    Abstract: A process for depositing an inorganic material on a substrate, the process comprising, providing a substrate having a surface, providing a precursor mixture comprising a metal sulfonate, and delivering the precursor mixture to the surface of the substrate, wherein the surface of the substrate is at a substrate temperature of above 450° C. and is sufficient to effect decomposition of the metal sulfonate. The inorganic material may include a metal or a metal oxide. The preferred metal sulfonate is metal triflate.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: December 24, 2019
    Assignees: Pilkington Group Limited, University College London
    Inventors: Deborah Raisbeck, Simon James Hurst, Ivan P. Parkin, Claire J. Carmalt, Joe A. Manzi
  • DEPOSITION PROCESS
    Publication number: 20180230594
    Abstract: A process for depositing an inorganic material on a substrate, the process comprising, providing a substrate having a surface, providing a precursor mixture comprising a metal sulfonate, and delivering the precursor mixture to the surface of the substrate, wherein the surface of the substrate is at a substrate temperature of above 450° C. and is sufficient to effect decomposition of the metal sulfonate. The inorganic material may include a metal or a metal oxide. The preferred metal sulfonate is metal triflate.
    Type: Application
    Filed: February 10, 2016
    Publication date: August 16, 2018
    Inventors: DEBORAH RAISBECK, SIMON JAMES HURST, IVAN P. PARKIN, CLAIRE J. CARMALT, JOE A. MANZI
  • High efficiency thin film transistor device with gallium arsenide layer
    Patent number: 8846437
    Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: September 30, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, Robert Jan Visser, Srikant Rao, Bhaskar Kumar, Claire J. Carmalt, Ranga Rao Arnepalli, Omkaram Nalamasu, Gaurav Saraf, Sanjayan Sathasivam, Christopher Stuart Blackman
  • HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER
    Publication number: 20120080092
    Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 5, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kaushal K. Singh, Robert Jan Visser, Srikant Rao, Bhaskar Kumar, Claire J. Carmalt, Ranga Rao Arnepalli, Omkaram Nalamasu, Gaurav Saraf, Sanjayan Sathasivam, Christopher Stuart Blackman