Patents by Inventor Claire L. Pettiette-Hall

Claire L. Pettiette-Hall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Implant-patterned superconductive device and a method for indirect ion implantation of superconductive films
    Patent number: 6335108
    Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: January 1, 2002
    Assignee: TRW Inc.
    Inventors: John R. LaGraff, Claire L. Pettiette-Hall, James M. Murduck, Hugo W-K. Chan
  • Method for indirect Ion implantation of oxide superconductive films
    Patent number: 6147032
    Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: November 14, 2000
    Assignee: TRW Inc.
    Inventors: John R. LaGraff, Claire L. Pettiette-Hall, James M. Murduck, Hugo W-K. Chan