Patents by Inventor Claire Louise Wiggins

Claire Louise Wiggins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of depositing dielectric
    Patent number: 6936481
    Abstract: This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.
    Type: Grant
    Filed: January 6, 2003
    Date of Patent: August 30, 2005
    Assignee: Trikon Holdings Limited
    Inventor: Claire Louise Wiggins
  • Method of depositing a layer
    Patent number: 6905962
    Abstract: This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.
    Type: Grant
    Filed: September 4, 2003
    Date of Patent: June 14, 2005
    Assignee: Trikon Technologies Limited
    Inventors: Knut Beekman, Paul Rich, Claire Louise Wiggins
  • Method and depositing a layer
    Patent number: 6831010
    Abstract: This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.
    Type: Grant
    Filed: April 12, 2000
    Date of Patent: December 14, 2004
    Assignee: Trikon Technologies Limited
    Inventors: Knut Beekman, Paul Rich, Claire Louise Wiggins
  • Method of depositing aluminium nitride
    Publication number: 20040188241
    Abstract: A method of depositing crystallographically orientated aluminium nitride. Aluminium nitride is sputter deposited from a target on a workpiece maintained on a biased platen. The sputter gas is or includes krypton or xenon. The bias to the platen is selected to give a substantially flat XRD FWHM profile across the wafer and a stress in the film of less than or equal to ±5E10-8 dynes per cm2.
    Type: Application
    Filed: January 7, 2004
    Publication date: September 30, 2004
    Inventors: Paul Rich, Claire Louise Wiggins
  • Method of depositing a layer
    Publication number: 20040058529
    Abstract: This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.
    Type: Application
    Filed: September 4, 2003
    Publication date: March 25, 2004
    Inventors: Knut Beekman, Paul Rich, Claire Louise Wiggins
  • Method of depositing dielectric
    Publication number: 20030096508
    Abstract: This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.
    Type: Application
    Filed: January 6, 2003
    Publication date: May 22, 2003
    Inventor: Claire Louise Wiggins
  • Method and depositing a layer
    Publication number: 20020132460
    Abstract: This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.
    Type: Application
    Filed: April 12, 2000
    Publication date: September 19, 2002
    Inventors: Knut Beekman, Paul Rich, Claire Louise Wiggins
  • Method of depositing dielectric
    Publication number: 20010041460
    Abstract: This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.
    Type: Application
    Filed: April 12, 2001
    Publication date: November 15, 2001
    Inventor: Claire Louise Wiggins