Patents by Inventor Claire Richtarch

Claire Richtarch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Treatment of a Germanium Layer Bonded with a Substrate
    Publication number: 20080268615
    Abstract: The invention relates to a treatment method of a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded with the substrate, the method comprising a treatment to improve the electrical properties of the layer and/or the interface of the Ge layer with the underlying layer, characterised in that said treatment is a heat treatment applied at a temperature between 500° C. and 600° C. for not more than 3 hours.
    Type: Application
    Filed: October 17, 2006
    Publication date: October 30, 2008
    Inventors: Frederic Allibert, Chrystel Deguet, Claire Richtarch
  • Method of preparing a surface of a semiconductor wafer to make it epiready
    Patent number: 7060620
    Abstract: The invention concerns a method of preparing the surface of a semiconductor wafer intended for microelectronics and/or optoelectronics applications. In particular, a method of preparing a SiC surface of a semiconductor wafer to make it epiready is described. The technique includes annealing the wafer in an oxidizing atmosphere, and polishing a surface of the wafer with an abrasive based on particles of colloidal silica to make the SiC wafer surface suitable for homoepitaxy or heteroepitaxy.
    Type: Grant
    Filed: September 25, 2003
    Date of Patent: June 13, 2006
    Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.
    Inventor: Claire Richtarch
  • Method of preparing a surface of a semiconductor wafer to make it epiready
    Publication number: 20050020084
    Abstract: The invention concerns a method of preparing the surface of a semiconductor wafer intended for microelectronics and/or optoelectronics applications. In particular, a method of preparing a SiC surface of a semiconductor wafer to make it epiready is described. The technique includes annealing the wafer in an oxidizing atmosphere, and polishing a surface of the wafer with an abrasive based on particles of colloidal silica to make the SiC wafer surface suitable for homoepitaxy or heteroepitaxy.
    Type: Application
    Filed: September 25, 2003
    Publication date: January 27, 2005
    Inventor: Claire Richtarch
  • Method for providing a smooth wafer surface
    Publication number: 20040055998
    Abstract: A method for providing a smooth wafer surface. The technique includes formulating an abrasive mixture by mixing diamond particles and silica particles in a solution based on a predetermined diamond/silica volume ratio mixing diamond particles, and polishing a surface of the wafer with the abrasive mixture to obtain a desired smoothness.
    Type: Application
    Filed: July 18, 2003
    Publication date: March 25, 2004
    Inventors: Fabrice Letertre, Claire Richtarch