Patents by Inventor Clarance J. Tracy

Clarance J. Tracy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MRAM architecture
    Patent number: 6888743
    Abstract: An MRAM architecture is provided that reduces the number of isolation transistors. The MRAM architecture includes magnetoresistive memory cells that are electrically coupled to form a ganged memory cell. The magnetoresistive memory cells of the ganged memory cell are formed with Magnetic Tunnel Junctions (MTJs) and formed without isolation devices, such as isolation transistors, and a programming line and a bit line are adjacent to each of the magnetoresistive memory cells. Preferably, the magnetoresistive memory cells of the ganged memory cell only include MTJs, and a programming line and a bit line are adjacent to each of the magnetoresistive memory cells.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: May 3, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Mark A. Durlam, Thomas W. Andre, Brian R. Butcher, Mark F. Deherrera, Bradley N. Engel, Bradley J. Garni, Gregory W. Grynkewich, Joseph J. Nahas, Nicholas D. Rizzo, Saied Tehrani, Clarance J. Tracy
  • MRAM architecture
    Publication number: 20040125646
    Abstract: An MRAM architecture is provided that reduces the number of isolation transistors. The MRAM architecture includes magnetoresistive memory cells that are electrically coupled to form a ganged memory cell. The magnetoresistive memory cells of the ganged memory cell are formed with Magnetic Tunnel Junctions (MTJs) and formed without isolation devices, such as isolation transistors, and a programming line and a bit line are adjacent to each of the magnetoresistive memory cells. Preferably, the magnetoresistive memory cells of the ganged memory cell only include MTJs, and a programming line and a bit line are adjacent to each of the magnetoresistive memory cells.
    Type: Application
    Filed: December 27, 2002
    Publication date: July 1, 2004
    Inventors: Mark A. Durlam, Thomas W. Andre, Brian R. Butcher, Mark F. Deherrera, Bradley N. Engel, Bradley J. Garni, Gregory W. Grynkewich, Joseph J. Nahas, Nicholas D. Rizzo, Saied Tehrani, Clarance J. Tracy