Abstract: An optical device comprising an anode, a cathode comprising barium, strontium or calcium, and a layer of organic semiconducting material between the anode and the cathode wherein a layer of hole transporting and electron blocking material is located between the anode and the layer of organic semiconducting material.

Abstract: An organic light emissive device comprising: a first electrode; a second electrode; and an organic light emissive region between the first and second electrodes comprising an organic light emissive material which has a peak emission wavelength, wherein at least one of the electrodes is transparent and comprises a composite of a charge injecting metal and another material which is codepositable with the charge injecting metal, the other material having a different refractive index to that of the charge injecting metal and wherein the other material has a lower degree of quenching at the peak emission wavelength than the charge injecting metal whereby quenching of excitons by the at least one electrode is reduced, the charge injecting metal comprising either a low work function metal having a work function of no more than 3.5 eV or a high work function metal having a work function of no less than 4.5 eV.

Abstract: An organic light emissive device comprising: a first electrode; a second electrode; and an organic light emissive region between the first and second electrodes comprising an organic light emissive material which has a peak emission wavelength, wherein at least one of the electrodes is transparent and comprises a composite of a charge injecting metal and another material which is codepositable with the charge injecting metal, the other material having a different refractive index to that of the charge injecting metal and wherein the other material has a lower degree of quenching at the peak emission wavelength than the charge injecting metal whereby quenching of excitons by the at least one electrode is reduced, the charge injecting metal comprising either a low work function metal having a work function of no more than 3.5 eV or a high work function metal having a work function of no less than 4.5 eV.

Abstract: A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.

Abstract: This invention generally relates to methods, apparatus and computer program code processing digital data using non-negative matrix factorisation.

Abstract: A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.

Abstract: A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.

Abstract: An encoding method, decoding method and a communication method using single photons where information is directly encoded into each photon. In one embodiment at least two out of the three parameters of phases, polarization, and energy are used to encode information. In another embodiment, three or more non-orthogonal states with respect to each parameter are used. A further embodiment is also described which uses selective grouping of the results in order to more clearly detect the presence of an eavesdropper. Apparatus capable of performing the methods are also provided.

Abstract: This invention generally relates to methods, apparatus and computer program code processing digital data using non-negative matrix factorisation.

Abstract: An organic light emissive device comprising: a first electrode; a second electrode; and an organic light emissive region between the first and second electrodes comprising an organic light emissive material which has a peak emission wavelength, wherein at least one of the electrodes is transparent and comprises a composite of a charge injecting metal and another material which is codepositable with the charge injecting metal, the other material having a different refractive index to that of the charge injecting metal and wherein the other material has a lower degree of quenching at the peak emission wavelength than the charge injecting metal whereby quenching of excitons by the at least one electrode is reduced, the charge injecting metal comprising either a low work function metal having a work function of no more than 3.5 eV or a high work function metal having a work function of no less than 4.5 eV.

Abstract: A photon source, comprising a first semiconductor region having excess carriers with a first conductivity type, and a second semiconductor region having excess carriers with a second conductivity type, the first and second conductivity types being opposing conductivity types; means for creating a surface acoustic wave (SAW) travelling from the first semiconductor region to the second semiconductor region such that excess carriers from the first semiconductor region are carried by the wave to the second region and quantizing means for quantizing the carrier transport caused by the wave, such that the number of carriers introduced into the second semiconductor region can be controlled to the accuracy of a single carrier.

Abstract: An encoding method, decoding method and a communication method using single photons where information is directly encoded into each photon. In one embodiment at least two out of the three parameters of phases, polarisation, and energy are used to encode information. In another embodiment, thee or more non-orthogonal states with respect to each parameter are used. A further embodiment is also described which uses selective grouping of the results in order to more clearly detect the presence of an eavesdropper. Apparatus capable of performing the methods are also provided.