Patents by Inventor Clarence John Dunnrowicz

Clarence John Dunnrowicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area
    Patent number: 7012288
    Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.
    Type: Grant
    Filed: October 8, 2002
    Date of Patent: March 14, 2006
    Assignee: WJ Communications, Inc.
    Inventors: Chien Ping Lee, Hin Fai Chau, Nanlei Larry Wang, Clarence John Dunnrowicz, Yan Chen, Barry Jia-Fu Lin
  • Heterojunction bipolar transistor having wide bandgap material in collector
    Patent number: 6806513
    Abstract: The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.
    Type: Grant
    Filed: October 8, 2002
    Date of Patent: October 19, 2004
    Assignee: EIC Corporation
    Inventors: Hin Fai Chau, Clarence John Dunnrowicz, Yan Chen, Chien Ping Lee
  • Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area
    Publication number: 20040188712
    Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (continuous or stepped) doping between the base region and the underlying subcollector region with the collector doping being lowest near the base and highest near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.
    Type: Application
    Filed: April 7, 2004
    Publication date: September 30, 2004
    Applicant: EiC Corporation
    Inventors: Chien Ping Lee, Frank Hin Fai Chau, Nanlei Larry Wang, Clarence John Dunnrowicz, Yan Chen, Barry Jia-Fu Lin
  • Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area
    Publication number: 20040065897
    Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.
    Type: Application
    Filed: October 8, 2002
    Publication date: April 8, 2004
    Applicant: EiC Corporation
    Inventors: Chien Ping Lee, Hin Fai Chau, Nanlei Larry Wang, Clarence John Dunnrowicz, Yan Chen, Barry Jia-Fu Lin
  • Heterojunction bipolar transistor having wide bandgap material in collector
    Publication number: 20040065898
    Abstract: The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.
    Type: Application
    Filed: October 8, 2002
    Publication date: April 8, 2004
    Applicant: EiC Corporation
    Inventors: Hin Fai Chau, Clarence John Dunnrowicz, Yan Chen, Chien Ping Lee