Abstract: The present invention includes a molecular melt composition comprising an antioxidant and a coupling agent. The molecular melt is partially amorphous in nature. The invention also includes a method for making the molecular melt composition and a method for using the molecular melt to produce coupled polymers. The invention further includes a method for using an antioxidant to phlagmatize a coupling agent.

Abstract: The present invention includes a molecular melt composition comprising an antioxidant and a coupling agent. The molecular melt is partially amorphous in nature. The invention also includes a method for making the molecular melt composition and a method for using the molecular melt to produce coupled polymers. The invention further includes a method for using an antioxidant to phlagmatize a coupling agent.

Abstract: Integrated processes of preparing industrial chemicals starting from seed oil feedstock compositions containing one or more unsaturated fatty acids or unsaturated fatty acid esters, which are essentially free of metathesis catalyst poisons, particularly hydroperoxides; metathesis of the feedstock composition with a lower olefin, such as ethylene, to form a reduced chain olefin, preferably, a reduced chain ?-olefin, and a reduced chain unsaturated acid or ester, preferably, a reduced chain ?,?-unsaturated acid or ester. The reduced chain unsaturated acid or ester may be (trans)esterified to form a polyester polyolefin, which may be epoxidized to form a polyester polyepoxide. The reduced chain unsaturated acid or ester may be hydroformylated with reduction to produce an ?,?-hydroxy acid or ?,?-hydroxy ester, which may be (trans)esterified with a polyol to form an ?,?polyester polyol.

Abstract: A method for making a semiconductor device is described. That method comprises forming a carbon doped oxide containing layer and a dielectric layer on a substrate, such that at least part of the dielectric layer is located above at least part of the carbon doped oxide containing layer. A chemical mechanical polishing process is then applied to remove the part of the dielectric layer that is located above the part of the carbon doped oxide containing layer, such that it removes the dielectric layer at a significantly faster rate than it can remove the carbon doped oxide containing layer.

Abstract: A method for making a semiconductor device is described. That method comprises forming a carbon doped oxide containing layer and a dielectric layer on a substrate, such that at least part of the dielectric layer is located above at least part of the carbon doped oxide containing layer. A chemical mechanical polishing process is then applied to remove the part of the dielectric layer that is located above the part of the carbon doped oxide containing layer, such that it removes the dielectric layer at a significantly faster rate than it can remove the carbon doped oxide containing layer.

Abstract: A method for making a semiconductor device is described. That method comprises forming a carbon doped oxide containing layer and a dielectric layer on a substrate, such that at least part of the dielectric layer is located above at least part of the carbon doped oxide containing layer. A chemical mechanical polishing process is then applied to remove the part of the dielectric layer that is located above the part of the carbon doped oxide containing layer, such that it removes the dielectric layer at a significantly faster rate than it can remove the carbon doped oxide containing layer.