Abstract: A Partially Non-Volatile Dynamic Random Access Memory (PNDRAM) uses a DRAM array formed by a plurality of single transistor (1T) cells or two transistor (2T) cells. The cells are electrically programmable as a non-volatile memory. This results in a single chip design featuring both, a dynamic random access memory (DRAM) and an electrically programmable-read-only-memory (EPROM). The DRAM and the EPROM integrated in the PNDRAM can be easily reconfigured at any time, whether during manufacturing or in the field. The PNDRAM has multiple applications such as combining a main memory with ID, BIOS, or operating system information in a single chip.

Abstract: Each upright of an electronic, especially telecommunication equipment rack comprises an outer profile and an inner profile delimiting a hollow interior volume used to run connections along equipment supported by said uprights. The profiles are such that the interior volume has in the heightwise and depthwise directions an opening accessible from the front side of the rack providing easy access to the connections along all of their path between the points at which they enter and leave the interior volume.