Patents by Inventor Claude Chappert
Claude Chappert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9305607Abstract: An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.Type: GrantFiled: March 23, 2012Date of Patent: April 5, 2016Assignees: UNIVERSITE PARIS SUD 11, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Weisheng Zhao, Sumanta Chaudhuri, Claude Chappert, Jacques-Olivier Klein
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Patent number: 9093163Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.Type: GrantFiled: January 14, 2010Date of Patent: July 28, 2015Assignees: HITACHI, LTD., UNIVERSITE PARIS SUD XI, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Joerg Wunderlich, Jan Zemen, Claude Chappert, Bryan Gallagher, Thibaut Devolder, David Williams
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Publication number: 20140016390Abstract: An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.Type: ApplicationFiled: March 23, 2012Publication date: January 16, 2014Inventors: Weisheng Zhao, Sumanta Chaudhuri, Claude Chappert, Jacques-Olivier Klein
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Patent number: 8138758Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.Type: GrantFiled: March 18, 2008Date of Patent: March 20, 2012Assignees: Hitachi, Ltd., Universite Paris Sud XI, Centre National de la Recherche ScientifiqueInventors: Joerg Wunderlich, Tomas Jungwirth, Jan Zemen, Bryan Gallagher, Claude Chappert, Thibaut Devolder
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Publication number: 20110170339Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.Type: ApplicationFiled: January 14, 2010Publication date: July 14, 2011Inventors: Joerg Wunderlich, Jan Zemen, Claude Chappert, Bryan Gallagher, Thibaut Devolder, David Williams
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Patent number: 7738286Abstract: A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.Type: GrantFiled: December 14, 2006Date of Patent: June 15, 2010Assignees: Hitachi, Ltd., Centre National de la Recherche Scientifique, Universite Paris Sud XIInventors: Kenchi Ito, Hiromasa Takahashi, Takayuki Kawahara, Riichiro Takemura, Thibault Devolder, Paul Crozat, Joo-von Kim, Claude Chappert
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Publication number: 20090016098Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.Type: ApplicationFiled: March 18, 2008Publication date: January 15, 2009Inventors: Joerg Wunderlich, Tomas Jungwirth, Jan Zemen, Bryan Gallagher, Claude Chappert, Thibaut Devolder
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Publication number: 20080037179Abstract: A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.Type: ApplicationFiled: December 14, 2006Publication date: February 14, 2008Inventors: Kenchi Ito, Hiromasa Takahashi, Takayuki Kawahara, Riichiro Takemura, Thibault Devolder, Paul Crozat, Joo-von Kim, Claude Chappert
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Patent number: 7298643Abstract: A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.Type: GrantFiled: April 25, 2005Date of Patent: November 20, 2007Assignees: STMicroelectronics SA, Centre National de la Recherche Scientifique, Universite de Paris SUD (Paris XI)Inventors: Joo-Von Kim, Thibaut Devolder, Claude Chappert, Cedric Maufront, Richard Fournel
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Patent number: 7132222Abstract: Process for writing on a material, in which said material is irradiated by means of a beam of light ions, such as for example He+ ions, said beam of light ions having an energy of the order of or less than a hundred keV, wherein this material comprises a plurality of superposed thin-layers, at least one of said thin layers being magnetic and in that one or more regions having sizes of the order of 1 micrometer or less are irradiated, the irradiation dose being controlled so as to be a few 1016 ions/cm2 or less, the irradiation modifying the composition of atomic planes in the material at one or more interfaces between two layers of the latter.Type: GrantFiled: April 14, 2004Date of Patent: November 7, 2006Assignee: Centre National de la Recherche Scientifique (CNRS)Inventors: Claude Chappert, Harry Bernas, Jacques Ferre
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Publication number: 20050237796Abstract: A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.Type: ApplicationFiled: April 25, 2005Publication date: October 27, 2005Applicants: STMicroelectronics S.A., Centre National de la Recherche Scientifique, Universite de Paris Sud (Paris XI)Inventors: Joo-Von Kim, Thibaut Devolder, Claude Chappert, Cedric Maufront, Richard Fournel
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Publication number: 20040259036Abstract: Process for writing on a material, in which said material is irradiated by means of a beam of light ions, such as for example He+ ions, said beam of light ions having an energy of the order of or less than a hundred keV, wherein this material comprises a plurality of superposed thin-layers, at least one of said thin layers being magnetic and in that one or more regions having sizes of the order of 1 micrometer or less are irradiated, the irradiation dose being controlled so as to be a few 1016 ions/cm2 or less, the irradiation modifying the composition of atomic planes in the material at one or more interfaces between two layers of the latter.Type: ApplicationFiled: April 14, 2004Publication date: December 23, 2004Inventors: Claude Chappert, Harry Bernas, Jacques Ferre
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Patent number: 6605321Abstract: The invention provides a method of treating a material to cause the material to evolve from one phase to a more ordered phase, the method comprising an operation of irradiating the material in which the irradiating particles are suitable, by their nature and by their energy, for inducing displacements of the atoms in the material towards positions that favor ordering of the material. Advantageously, the invention also provides apparatus for magnetically recording information, the apparatus comprising a material deposited on a substrate at a temperature of less than 350° C. and that has been subjected to irradiation with irradiating particles that are suitable, by their nature and their energy, for inducing displacements of the atoms in the material towards positions that favor relaxation of the material.Type: GrantFiled: July 20, 2000Date of Patent: August 12, 2003Assignee: Centre National de la Recherche Scientifique (CNRS)Inventors: Dafiné Ravelosona-Ramasitera, Claude Chappert, Véronique Mathet, Harry Bernas