Abstract: A fabrication method for a microstructure having a vacuum sealed cavity therein including the process steps of forming an aluminum filled cavity in a body of silicon material and heating the structure such that the aluminum is absorbed into the silicon material leaving a vacuum in the cavity. In one embodiment of the invention a cavity is etched into a silicon wafer and filled with aluminum. A silicon dioxide layer is formed over the aluminum filled cavity and the structure is heated to produce the vacuum cavity.

Abstract: A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.

Abstract: A method of depositing patterned thin films on an integrated circuit substrate which comprises first forming a layer of positive photoresist material on the substrate and then heating to partially cure the photoresist while maintaining the surface of the photoresist interfacing with the substrate at a lower temperature than the opposite surface of the photoresist which is being exposed to the heat. As a result of this expedient, the upper or exposed portion of the photoresist layer is cured to a greater extent than the lower portion at the interface with the substrate. Then, the photoresist layer is exposed to a selected pattern of light, after which developer for the photoresist material is applied.