Abstract: A vacuum process for etching a metal strip running over a backing roll facing a counterelectrode by magnetron sputtering, and a vacuum chamber etching installation implementing the process. A plasma is created in a gas close to the metal strip so as to generate radicals and/or ions that act on the strip, and at least one closed magnetic circuit, the width of which is approximately equal to that of the metal strip, is selected from a series of at least two closed magnetic circuits of different and fixed widths, then the selected magnetic circuit is positioned so as to face the metal strip, and then the etching of the moving metal strip is carried out.

Abstract: A vacuum process for etching a metal strip running over a backing roll facing a counterelectrode by magnetron sputtering, and a vacuum chamber etching installation implementing the process. A plasma is created in a gas close to the metal strip so as to generate radicals and/or ions that act on the strip, and at least one closed magnetic circuit, the width of which is approximately equal to that of the metal strip, is selected from a series of at least two closed magnetic circuits of different and fixed widths, then the selected magnetic circuit is positioned so as to face the metal strip, and then the etching of the moving metal strip is carried out.

Abstract: A magnetron sputtering method for vacuum coloring a metal strip passing above at least one conductive counter electrode in a vacuum chamber. The method creates a plasma in a gas close to the metal strip, such as to generate radicals and/or ions that act on the strip, a magnetic confinement circuit being positioned above the strip. The counter electrode includes a mobile surface that can move in rotation and/or translation in relation to the metal strip, the surface being moved during the coloring process and being continuously cleaned by a cleaning device that is obscured from the plasma before being exposed once again to the plasma. A coloring installation can implement the method.