Abstract: The invention relates to a process for fabricating a semiconductor optoelectronic device comprising an active region in strip form. The process comprises the stages consisting in 1) producing various layers (120, 130, 140, 150, 160) making up the complete structure of the optoelectronic device by a single epitaxy; 2) etching the structure obtained in stage 1) down to the base of the active layer (130) of the optoelectronic device to isolate a strip in the said active layer; 3) depositing an electrically isolating material of controlled index (170) on the etched zone. The invention also relates to the devices obtained.

Abstract: Process for the anisotropic etching of a III-V material and application to surface treatment for epitaxial growth.This process includes the step of etching a III-V material (2) by reactive ionic etching using a gaseous mixture containing by volume 20 to 30% of at least one gaseous hydrocarbon, 30 to 50% of at least one inert gas and 20 to 50% of hydrogen.Said etching can be performed locally with the aid of a Si.sub.3 N.sub.4 etching mask (4a).