Abstract: An image detector comprises a sensor produced on a first monolithic substrate comprising a set of pixels organized in a matrix on rows and columns and configured to generate signals as a function of a radiation striking the detector, column conductors, each linking the pixels of a same column and intended to convey the signals generated by the pixels, at least one bump contact situated at the periphery of the first substrate and outside of the matrix of pixels and linked to the column conductors. At least two column conductors are connected together on the first substrate outside of the matrix of pixels and the column conductors connected together converge toward the at least one bump contact.

Abstract: An image detector comprises a sensor produced on a first monolithic substrate comprising a set of pixels organized in a matrix on rows and columns and configured to generate signals as a function of a radiation striking the detector, column conductors, each linking the pixels of a same column and intended to convey the signals generated by the pixels, at least one bump contact situated at the periphery of the first substrate and outside of the matrix of pixels and linked to the column conductors. At least two column conductors are connected together on the first substrate outside of the matrix of pixels and the column conductors connected together converge toward the at least one bump contact.

Abstract: A method for forming a micro-optical or sub-micro-optical device is provided, including: forming a photolithographic mask on a transparent support, depositing a layer of a photosensitive material of negative polarity on the face, a so called front face, of the support which supports the mask, wherein the mask is disposed under the areas where the photosensitive material should be removed, insolating the layer of the photosensitive material through the rear face of the support, developing the photosensitive material in order to obtain walls of micron or submicron cavities, removing the mask areas located at the bottom of the cavities in order to obtain cavities without any mask material between the walls, introducing a fluid into the cavities of the device, and forming a closure layer on the walls in photosensitive material.

Abstract: The invention relates to a method for forming walls of micron or submicron cavities, including: the formation of a photolithographic mask on a transparent support (10, 12, 14), the deposition of a resin layer (18) of photosensitive material on the face, a so-called front face, of the support which supports the mask, the insolation of the photosensitive material layer through the rear face (10?) of the support, the development of the photosensitive material for obtaining said walls.