Abstract: A method for producing rough surface structures comprising the following step: running a laser beam along filling lines (1) over an area to be processed, wherein the filling line (1) is broken down into particular laser dots (2) with a distance a, and wherein the laser dots (2) are moved in a X direction and in a Y direction in a plane with a random factor b relative to the filling line (1) so that they form a cloud of dots.

Abstract: A method for producing rough surface structures comprising the following step: running a laser beam along filling lines (1) over an area to be processed, wherein the filling line (1) is broken down into particular laser dots (2) with a distance a, and wherein the laser dots (2) are moved in a X direction and in a Y direction in a plane with a random factor b relative to the filling line (1) so that they form a cloud of dots.

Abstract: A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an F2 gas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.

Abstract: An improved wide passage cross-flow filtration cassette is disclosed that incorporates an open mesh matrix retentate spacer that is dimensioned and oriented so as to improve flux and cause turbulence in the flow of fluids through the cassette.

Abstract: A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an F2 gas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.

Abstract: An improved wide passage cross-flow filtration cassette is disclosed that incorporates an open mesh matrix retentate spacer that is dimensioned and oriented so as to improve flux and cause turbulence in the flow of fluids through the cassette.

Abstract: A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an F2 gas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.

Abstract: A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an F2 gas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.