Abstract: Substrates suitable for mirrors used at wavelengths in the EUV wavelength range have substrates (1) including a base body (2) made of a precipitation-hardened alloy, of an intermetallic phase of an alloy system, of a particulate composite or of an alloy having a composition which, in the phase diagram of the corresponding alloy system, lies in a region which is bounded by phase stability lines. Preferably, the base body (2) is made of a precipitation-hardened copper or aluminum alloy. A highly reflective layer (6) is preferably provided on a polishing layer (3) of the substrate (1) of the EUV mirror (5).

Abstract: Substrates suitable for mirrors used at wavelengths in the EUV wavelength range have substrates (1) including a base body (2) made of a precipitation-hardened alloy, of an intermetallic phase of an alloy system, of a particulate composite or of an alloy having a composition which, in the phase diagram of the corresponding alloy system, lies in a region which is bounded by phase stability lines. Preferably, the base body (2) is made of a precipitation-hardened copper or aluminum alloy. A highly reflective layer (6) is preferably provided on a polishing layer (3) of the substrate (1) of the EUV mirror (5).

Abstract: Substrates suitable for mirrors used at wavelengths in the EUV wavelength range have substrates (1) including a base body (2) made of a precipitation-hardened alloy, of an intermetallic phase of an alloy system, of a particulate composite or of an alloy having a composition which, in the phase diagram of the corresponding alloy system, lies in a region which is bounded by phase stability lines. Preferably, the base body (2) is made of a precipitation-hardened copper or aluminum alloy. A highly reflective layer (6) is preferably provided on a polishing layer (3) of the substrate (1) of the EUV mirror (5).

Abstract: A method and a device for the material-fit connection of an optical element to a frame are disclosed.

Abstract: Substrates suitable for mirrors which are used at wavelengths in the EUV wavelength range have a main body (2) and a polishing layer (3). The polishing layer (3) has a thickness of less than 10 ?m and a root-mean-square roughness of less than 0.5 nm and the main body (2) is produced from an aluminum alloy. Moreover, a highly reflective layer (6) is provided on the polishing layer (3) of the substrate (1) of the EUV mirror (5).

Abstract: A method and a device for the material-fit connection of an optical element to a frame are disclosed.

Abstract: A method and a device for the material-fit connection of an optical element to a frame are disclosed.

Abstract: Substrates suitable for mirrors used at wavelengths in the EUV wavelength range have substrates (1) including a base body (2) made of a precipitation-hardened alloy, of an intermetallic phase of an alloy system, of a particulate composite or of an alloy having a composition which, in the phase diagram of the corresponding alloy system, lies in a region which is bounded by phase stability lines. Preferably, the base body (2) is made of a precipitation-hardened copper or aluminum alloy. A highly reflective layer (6) is preferably provided on a polishing layer (3) of the substrate (1) of the EUV mirror (5).

Abstract: A composite structure for microlithography, in particular a holding device for a wafer, has two or more components, the surfaces of which are bonded together at least at one bond. At least one of the components consists of cordierite (Mg2Al4Si5O18) or of silicon carbide (SiC). Also disclosed is an optical arrangement, in particular a projection illumination apparatus for microlithography, having at least one such composite structure, preferably a wafer stage.

Abstract: A method and a device for the material-fit connection of an optical element to a frame are disclosed.

Abstract: A composite structure for microlithography, in particular a holding device for a wafer, has two or more components, the surfaces of which are bonded together at least at one bond. At least one of the components consists of cordierite (Mg2Al4Si5O18) or of silicon carbide (SiC). Also disclosed is an optical arrangement, in particular a projection illumination apparatus for microlithography, having at least one such composite structure, preferably a wafer stage.

Abstract: Arrangements of a first body and a second body connected to the first body, as well as related systems and methods, are disclosed. The arrangements, systems and methods can be used, for example, with optical devices, such as in the field of microlithography systems used to manufacture of microelectronic devices.

Abstract: There is provided a support structure for temporarily supporting a substrate in a support di-reaction during one of treatment and handling of the substrate comprising a base structure and at least one layer connected to the base structure. The at least one layer defines at least one protrusion of the support structure, the at least one protrusion being adapted to contact the substrate when the substrate is supported by the support structure. The at least one layer comprises a wear resistant material.