Abstract: Mono-substituted tin silanolate compounds and related methods are provided. A method comprises contacting a mono-substituted tin (IV) compound with a silanolate reactant to form a mono-substituted tin silanolate compound. A composition comprises a mono-substituted tin silanolate compound.

Abstract: The present disclosure includes a method of obtaining an alkyltintrihalide, obtaining a solvent, and contacting the alkyltintrihalide and the solvent, thereby forming an alkyltintrihalide adduct. Also described is a composition including: an alkyltintrihalide adduct of the formula: RSnX3·(solv)n, wherein: R is a substituted C1-C5 alkyl, an unsubstituted C1-C5 alkyl, a substituted C1-C5 alkenyl, or an unsubstituted C1-C5 alkenyl; X is Cl, Br, or I; solv is a solvent; and n is at least 1.

Abstract: Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 ?-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.

Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Abstract: Disclosed are methods of deposition a Si-containing layer that comprise: exposing a substrate to a vapor of an Si-containing film forming composition comprising an organosilane precursor having the formula (R?3Si—CH2)-(E-(CR)n-E)-(CH2—SiR?3)x??(I) R?3Si—CH2)—NR2??(II) (R?3Si—CH2)—NR—SiR???(III) wherein x is 0 or 1; (E-(CR)n-E) is a monoanionic bidentate ligand bonding to the carbon through one or two Es, wherein n is 1 or 3; each E is independently chosen from N, NR, O or S; and R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group; and each R? is independently selected from the group of H, a C1 to C6 alkyl group, a C3-C20 aryl, heterocycle group, C1-C6 alkoxy group or C1-C6 alkylamino; and depositing at least part of the organosilane precursor onto the substrate to form a Si-containing layer using a deposition method.

Abstract: Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 ?-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted halocarbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Disclosed are Si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (R1)aN(—SiHR2—CH2—SiH2R3)3?a, wherein a=0 or 1; R1 is H, a C1 to C6 alkyl group, or a halogen; R2 and R3 is each independently H; a halogen; an alkoxy group having the formula OR?, wherein R? is an alkyl group (C1 to C6); or an alkylamino group having the formula NR?2, wherein each R? is independently H, a C1-C6 alkyl group, a C1-C6 alkenyl group, or a C3-C10 aryl or heterocycle group. Also disclosed are methods of synthesizing the carbosilane substituted amine precursors and their use for deposition processes.

Abstract: Disclosed are Si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (R1)aN(—SiHR2—CH2—SiH2R3)3-a, wherein a=0 or 1; R1 is H, a C1 to C6 alkyl group, or a halogen; R2 and R3 is each independently H; a halogen; an alkoxy group having the formula OR?, wherein R? is an alkyl group (C1 to C6); or an alkylamino group having the formula NR?2, wherein each R? is independently H, a C1-C6 alkyl group, a C1-C6 alkenyl group, or a C3-C10 aryl or heterocycle group. Also disclosed are methods of synthesizing the carbosilane substituted amine precursors and their use for deposition processes.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: A SiH[CH2—Si(OEt)3]3 carbosilane compound is synthesized by reacting a Grignard reagent having the formula Si(OEt)3(CH2MgCl) with a quenching agent having the formula SiHCl3.