Abstract: Methods are provided. A method comprises contacting a tin (IV) compound with a reagent to form at least one reaction product. The regent comprises at least one of a metal alkoxide compound, a metal amide compound, or any combination thereof. The at least one reaction product comprises at least one of a substituted tin (IV) amide compound, a substituted tin (IV) alkoxide compound, or any combination thereof. Various compositions and various compounds, among other things, are also provided.

Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Abstract: Multi-nuclear tin compounds and related methods are provided. A method comprises obtaining a mono-substituted tin (IV) amide compound; obtaining a silanol compound; and contacting the mono-substituted tin (IV) amide compound with the silanol compound to form a multi-nuclear tin compound. A composition comprises a multi-nuclear tin compound.

Abstract: A method of synthesis of a mono-substituted tin compound comprises contacting a stannous halide with a metalated reactant to form a stannylene compound; contacting the stannylene compound with a halide compound to form a stannic compound; and contacting the stannic compound with a reactant to form a mono-substituted tin compound via ligand exchange. A composition comprising the mono-substituted tin compound is also provided, among other compositions and methods.

Abstract: A method of forming a conformal and continuous crystalline Si film on a surface of a substrate comprises: exposing the substrate to a vapor of a first Si-containing precursor under a first temperature; allowing a seed film being formed onto the surface; exposing the substrate to a vapor of a second Si-containing precursor and a vapor of a dopant precursor under a second temperature; depositing a doped amorphous Si-containing film onto the seed film by a chemical vapor deposition (CVD) process; and annealing the substrate to crystalize the doped amorphous Si-containing film forming the conformal and continuous crystalline Si film on the surface. The first Si-containing precursor is (diisobutylamine)trisilane ((iBu)2-N—(SiH2)2—SiH3).

Abstract: Precursors useful in the formation of tin-containing films are provided. The precursors comprise a functionalized tin compound in which one or more ligands are coordinated to Sn, and the Sn is functionalized with at least one functional group. Methods for forming the precursors and methods for forming tin-containing films using the precursors are further provided.

Abstract: Mono-substituted tin silanolate compounds and related methods are provided. A method comprises contacting a mono-substituted tin (IV) compound with a silanolate reactant to form a mono-substituted tin silanolate compound. A composition comprises a mono-substituted tin silanolate compound.

Abstract: The present disclosure includes a method of obtaining an alkyltintrihalide, obtaining a solvent, and contacting the alkyltintrihalide and the solvent, thereby forming an alkyltintrihalide adduct. Also described is a composition including: an alkyltintrihalide adduct of the formula: RSnX3·(solv)n, wherein: R is a substituted C1-C5 alkyl, an unsubstituted C1-C5 alkyl, a substituted C1-C5 alkenyl, or an unsubstituted C1-C5 alkenyl; X is Cl, Br, or I; solv is a solvent; and n is at least 1.

Abstract: Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 ?-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.

Abstract: Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Abstract: Disclosed are methods of deposition a Si-containing layer that comprise: exposing a substrate to a vapor of an Si-containing film forming composition comprising an organosilane precursor having the formula (R?3Si—CH2)-(E-(CR)n-E)-(CH2—SiR?3)x??(I) R?3Si—CH2)—NR2??(II) (R?3Si—CH2)—NR—SiR???(III) wherein x is 0 or 1; (E-(CR)n-E) is a monoanionic bidentate ligand bonding to the carbon through one or two Es, wherein n is 1 or 3; each E is independently chosen from N, NR, O or S; and R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group; and each R? is independently selected from the group of H, a C1 to C6 alkyl group, a C3-C20 aryl, heterocycle group, C1-C6 alkoxy group or C1-C6 alkylamino; and depositing at least part of the organosilane precursor onto the substrate to form a Si-containing layer using a deposition method.

Abstract: Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 ?-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted halocarbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.