Abstract: The invention relates to materials with permanent magnetic properties—also known as hard magnets—having the formula (Fe1-y Coy)2P1-xZx with Z=Si, Ge, B, As; and 0.5?x?0.5, and 0.05?y?0.3. The invention further relates to the hard magnet itself and a process for making the hard magnets.

Abstract: The present invention relates to a metallic hard magnetic material selected from an at least binary ferromagnetic or ferrimagnetic compound, with the metallic hard magnetic material including at least two different elements selected from the group consisting of 3d and 4f elements, where the metallic hard magnetic material is under an external magnetic field B of ?0.1 T.

Abstract: A method for controllably making catalysts with at least one metallic surface state, that includes: a) identifying all the topological insulators in the ICSD, b) calculating the Real Space Invariants of the valence bands for all these topological insulators in order to c) identify in all these topological insulators the Wyckoff Positions where the irreducible Wannier Charge Centers (WCCs) are localized, and then d) selecting as potentially catalytic active compound a topological insulator in which the position of WCCs is not occupied by any atom; e) synthesizing a crystal of the selected potentially catalytic active compound either so that it is grown in a predefined crystallographic direction (characterized by its Miller indices (h,k,l)) which exposes the metallic surface state; or cutting the crystal in a predefined crystallographic direction (characterized by its Miller indices (h,k,l)), so that the metallic surface state is exposed when ( ( { ( h , k , l ) · ( x - X j , y -

Abstract: The present disclosure refers to increasing the catalytic efficiency of Weyl semimetals by subjecting Weyl semimetals to an external magnetic field of greater than 0 T, for example greater than 0.1 T. In a preferred embodiment of the present disclosure the Weyl semimetal is selected from the group consisting of NbP, TaP, NbAs and TaAs.

Abstract: The invention relates to hard magnets that include an intermetallic compound having the general composition XaX?bYcZd where X and X? independently from one another are representative of a 3d transition metal with unpaired electrons; Y is a 4d or 5d transition metal of groups 5, 8, 9, or 10 Z is a main group element of groups 13, 14 or 15; a and d independently from one another represent a number between 0.1 and 2.0; and b and c independently from one another represent a number between 0.0 and 2.0; such that a+b+c+d is between 3.0 and 4.0.

Abstract: The present invention relates to a process for enhancing the catalytic efficiency of a catalyst for the oxygen evolution reaction (OER), comprising exposing the catalyst to an external magnetic field of between 65×10?6 mT and ?200 mT during the oxygen evolution reaction, wherein the catalyst is a material which exhibits an increased Berry phase induced by the exposure of the catalyst to the external magnetic field.

Abstract: The present invention refers to methods of increasing the catalytic efficieny of Hydrogen Evolution Reactions (HER) electrocatalysts with a low external magnetic field. The present invention further includes electrochemical cells having an external magnetic field. The electrocatalyst is a metal or a compound with partially filled d-orbitals, more preferred a ferromagnetic or paramagnetic material with partially filled d-orbitals.

Abstract: The present invention refers to material comprising a compound of the formula ABOx wherein x is >1.5 and ?2.5, A is independently selected from a transition metal of IUPAC groups 10 and 11, and B is independently selected from a transition metal of IUPAC group 6, 7, 8 or 9 or a main group element of IUPAC group 13, as highly active catalyst for hydrogen evolution reaction (HER).

Abstract: Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.

Abstract: The invention relates to hard magnets that include an intermetallic compound having the general composition XaX?bYcZd where X and X? independently from one another are representative of a 3d transition metal with unpaired electrons; Y is a 4d or 5d transition metal of groups 5, 8, 9, or 10 Z is a main group element of groups 13, 14 or 15; a and d independently from one another represent a number between 0.1 and 2.0; and b and c independently from one another represent a number between 0.0 and 2.0; such that a+b+c+d is between 3.0 and 4.0.

Abstract: Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.

Abstract: The present disclosure refers to increasing the catalytic efficiency of Weyl semimetals by subjecting Weyl semimetals to an external magnetic field of greater than 0 T, for example greater than 0.1 T. In a preferred embodiment of the present disclosure the Weyl semimetal is selected from the group consisting of NbP, TaP, NbAs and TaAs.

Abstract: Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.

Abstract: An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport.

Abstract: An inorganic, intermetallic compound contains at least two elements per formula unit and consists of at least two phases, at least one phase being semiconducting or semimetallic, these at least two phases are immiscible with each other and are thermodynamically stable, so as to allow the thermal conductivity of semi-Heusler alloys to be reduced while at the same time maintaining the electrical conductivity and the thermoelectric voltage.

Abstract: The invention relates to inorganic, intermetallic, inhomogeneous compounds having a magnetic resistance effect and an intrinsic field sensitivity of at least 7% at 1 T at room temperature. The invention further relates to a method for the production and use thereof, particularly as magnetic field sensors or in spin electronics.

Abstract: The invention relates to inorganic intermetallic compounds having a PMR effect (combined GMR/CMR effect), which are characterized in that they contain at least two elements per formula unit and have a field sensitivity of less than 10% per 0.1 T at temperatures greater than 290 K. The invention also relates to composites consisting of these compounds, to a method for the production thereof and to their use, in particular, as magnetic field sensors or in the domain of spin electronics.

Abstract: An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport.

Abstract: The invention relates to inorganic, intermetallic, inhomogeneous compounds having a magnetic resistance effect and an intrinsic field sensitivity of at least 7% at 1 T at room temperature. The invention further relates to a method for the production and use thereof, particularly as magnetic field sensors or in spin electronics.

Abstract: The invention relates to inorganic intermetallic compounds having a PMR effect (combined GMR/CMR effect), which are characterized in that they contain at least two elements per formula unit and have a field sensitivity of less than 10% per 0.1 T at temperatures greater than 290 K. The invention also relates to composites consisting of these compounds, to a method for the production thereof and to their use, in particular, as magnetic field sensors or in the domain of spin electronics.