Abstract: The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.

Abstract: In one embodiment, the component comprises a light reflective housing. The housing comprises a matrix material of a light-transmittive plastic and particles of a glass ceramic embedded therein. The particles comprise a mean diameter of at least 5 ?m. The particles comprise a glass matrix and crystallites. A refractive index difference between the glass matrix and the crystallites is at least 0.5, and the crystallites exhibit a mean diameter between 20 nm and 0.5 ?m, inclusive.

Abstract: In one embodiment, the component comprises a light reflective housing. The housing comprises a matrix material of a light-transmittive plastic and particles of a glass ceramic embedded therein. The particles comprise a mean diameter of at least 5 ?m. The particles comprise a glass matrix and crystallites. A refractive index difference between the glass matrix and the crystallites is at least 0.5, and the crystallites exhibit a mean diameter between 20 nm and 0.5 ?m, inclusive.

Abstract: The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.

Abstract: A method of manufacturing optoelectronic components includes spraying a fluorescent layer of an optoelectronic component onto a substrate, the substance or the substance mixture of the fluorescent layer including an electric charge when sprayed on, and wherein the electrically charged substance or the at least partially electrically charged substance mixture includes a larger electric potential when the fluorescent layer is sprayed on than at least one area of the substrate; and locally adjusting the thickness of the fluorescent layer of the sprayed-on fluorescent substance when spraying on the fluorescent layer onto the substrate by an electric potential gradient.

Abstract: A method of manufacturing optoelectronic components includes spraying a fluorescent layer of an optoelectronic component onto a substrate, the substance or the substance mixture of the fluorescent layer including an electric charge when sprayed on, and wherein the electrically charged substance or the at least partially electrically charged substance mixture includes a larger electric potential when the fluorescent layer is sprayed on than at least one area of the substrate; and locally adjusting the thickness of the fluorescent layer of the sprayed-on fluorescent substance when spraying on the fluorescent layer onto the substrate by an electric potential gradient.

Abstract: A UBM pad has a first material layer which has a first material, and a second material layer which has a second material and represents an end layer or is arranged between an end layer and the first material layer. The first material and the second material exhibit properties with regard to a solder material that the presence of the second material prevents any metallurgical reactions of the first material with the solder material in the entire temperature range of connecting and of the operation of the structured electronic device which are detrimental to the reliability of the overall joint.