Abstract: A fluid sensor for sensing a concentration or composition of a fluid, the sensor comprising a first temperature sensing element located on or within a first dielectric membrane and a second temperature sensing element located on or within a second dielectric membrane. An output circuit is configured to measure a differential signal between the first temperature sensing element and the second temperature sensing element. The fluid sensor comprises a first region configured to be exposed to the fluid, and a second region configured to be isolated from the fluid, where the first dielectric membrane is located in the first region, such that in use, the first dielectric membrane is exposed to the fluid, and wherein the second dielectric membrane is located in the second region such that in use, the second dielectric membrane is isolated from the fluid.

Abstract: We disclose herein a flow and thermal conductivity sensor comprising a semiconductor substrate comprising an etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the semiconductor substrate and a heating element located within the dielectric membrane. The dielectric membrane comprises one or more discontinuities located between the heating element and an edge of the dielectric membrane.

Abstract: We disclose herein a flow and thermal conductivity sensor comprising a semiconductor substrate comprising an etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the semiconductor substrate and a heating element located within the dielectric membrane. The dielectric membrane comprises one or more discontinuities located between the heating element and an edge of the dielectric membrane.

Abstract: We disclose herein a flow and thermal conductivity sensor comprising a semiconductor substrate comprising an etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the semiconductor substrate and a heating element located within the dielectric membrane. The dielectric membrane comprises one or more discontinuities located between the heating element and an edge of the dielectric membrane.