Patents by Inventor Claudio Lanzieri

Claudio Lanzieri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Enhancement/depletion PHEMT device
    Patent number: 8610173
    Abstract: An embodiment of the present invention concerns a layered epitaxial structure for enhancement/depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimeter-wave and microwave frequencies.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: December 17, 2013
    Assignee: Selex Sistemi Integrati S.p.A.
    Inventors: Alessandro Chini, Claudio Lanzieri
  • ENHANCEMENT/DEPLETION PHEMT DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130062667
    Abstract: An embodiment of the present invention concerns a layered epitaxial structure for enhancement/depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimetre-wave and microwave frequencies.
    Type: Application
    Filed: July 30, 2012
    Publication date: March 14, 2013
    Applicant: SELEX SISTEMI INTEGRATI S.P.A.
    Inventors: Alessandro CHINI, Claudio LANZIERI
  • Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same
    Patent number: 8120066
    Abstract: Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device (1) including a semi-insulating substrate (2); an epitaxial substrate (3) formed on the semi-insulating substrate (2) a contact layer (19). The contact layer (19) includes a lightly doped contact layer (20) formed on the Schottky layer (18), and a highly doped contact layer (21) formed on the lightly doped contact layer (20) and having a doping concentration higher than the lightly doped contact layer (20). The PHEMT power device (1) further includes a—wide recess (23) formed to penetrate the highly doped contact layer (21) and a narrow recess (24) formed in the wide recess (23) to penetrate the lightly doped contact layer (20). The gate electrode (6) is formed in the narrow recess (24) and in Schottky contact with the Schottky layer (18).
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: February 21, 2012
    Assignee: Selex Sistemi Integrati S.p.A.
    Inventors: Claudio Lanzieri, Simone Lavanga, Marco Peroni, Antonio Cetronio
  • SINGLE VOLTAGE SUPPLY PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT) POWER DEVICE AND PROCESS FOR MANUFACTURING THE SAME
    Publication number: 20100102358
    Abstract: Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device (1) including a semi-insulating substrate (2); an epitaxial substrate (3) formed on the semi-insulating substrate (2) a contact layer (19). The contact layer (19) includes a lightly doped contact layer (20) formed on the Schottky layer (18), and a highly doped contact layer (21) formed on the lightly doped contact layer (20) and having a doping concentration higher than the lightly doped contact layer (20). The PHEMT power device (1) further includes a—wide recess (23) formed to penetrate the highly doped contact layer (21) and a narrow recess (24) formed in the wide recess (23) to penetrate the lightly doped contact layer (20). The gate electrode (6) is formed in the narrow recess (24) and in Schottky contact with the Schottky layer (18).
    Type: Application
    Filed: October 4, 2006
    Publication date: April 29, 2010
    Inventors: Claudio Lanzieri, Simone Lavanga, Marco Peroni, Antonio Cetronio