Abstract: A Random Number Generator includes a photon source, one or more photon detectors configured to detect at least one photon belonging to a flow of detected photons (?) generated by the photon source, an electronic sampler operatively associated with the photon detectors and configured to implement a logic method for the extraction of a binary sequence based on the arrival time of each one of the detected photons (?). In the Random Number Generator, the photon source and the photon detectors are adjacent to one another and integrated in a single semiconductor substrate.

Abstract: A semiconductor device, sensor, and array of SPAD cubes are described. One example of the disclosed semiconductor device includes an array of single-photon avalanche diodes, each single-photon avalanche diode including an undepleted anode region, an undepleted cathode region, an active depleted region positioned between the anode region and cathode region, and at least one conductive trench extending between the anode region and cathode region. In some examples, the at least one conductive trench surrounds the active depleted region and reflects light back into the active depleted region such that one or more photons can be absorbed within the active depleted region even though an absorption coefficient of the light is greater than a thickness of the active depleted region.

Abstract: A semiconductor device, sensor, and array of SPAD cubes are described. One example of the disclosed semiconductor device includes an array of single-photon avalanche diodes, each single-photon avalanche diode including an undepleted anode region, an undepleted cathode region, an active depleted region positioned between the anode region and cathode region, and at least one conductive trench extending between the anode region and cathode region. In some examples, the at least one conductive trench surrounds the active depleted region and reflects light back into the active depleted region such that one or more photons can be absorbed within the active depleted region even though an absorption coefficient of the light is greater than a thickness of the active depleted region.

Abstract: A semiconductor device, sensor, and array of SPAD cubes are described. One example of the disclosed sensor includes at least one Single Photon Avalanche Diode (SPAD) cube established in a substrate, the at least one SPAD cube including a photosensitive area that is configured to produce an electrical signal in response to light impacting the photosensitive area, where the photosensitive area is positioned at a first side of the at least one SPAD cube, a contact that receives the electrical signal, where the contact is positioned at a second side of the at least one SPAD cube that opposes the first side of the at least one SPAD cube, and at least one trench that spans an entire thickness of the substrate thereby electrically and optically isolating the at least one SPAD cube from adjacent SPAD cubes.

Abstract: A semiconductor device, sensor, and array of SPAD cubes are described. One example of the disclosed sensor includes at least one Single Photon Avalanche Diode (SPAD) cube established in a substrate, the at least one SPAD cube including a photosensitive area that is configured to produce an electrical signal in response to light impacting the photosensitive area, where the photosensitive area is positioned at a first side of the at least one SPAD cube, a contact that receives the electrical signal, where the contact is positioned at a second side of the at least one SPAD cube that opposes the first side of the at least one SPAD cube, and at least one trench that spans an entire thickness of the substrate thereby electrically and optically isolating the at least one SPAD cube from adjacent SPAD cubes.

Abstract: A Random Number Generator includes a photon source, one or more photon detectors configured to detect at least one photon belonging to a flow of detected photons (?) generated by the photon source, an electronic sampler operatively associated with the photon detectors and configured to implement a logic method for the extraction of a binary sequence based on the arrival time of each one of the detected photons (?). In the Random Number Generator, the photon source and the photon detectors are adjacent to one another and integrated in a single semiconductor substrate.

Abstract: A semiconductor detector includes a plate-shaped semiconductor part, a signal output electrode for outputting a signal provided at one surface of the semiconductor part, a plurality of curved electrodes provided at the one surface of the semiconductor part and which have distances from the signal output electrode that are different from each other, and an arc-shaped collection electrode for collecting an electric charge generated at the semiconductor part. The plurality of curved electrodes are applied with voltage to generate in the semiconductor part a potential gradient in which a potential varies toward the signal output electrode. The collection electrode is located at a part of the semiconductor part between an adjacent pair of curved electrodes. The collection electrode is connected to a curved electrode located a distance from the signal output electrode shorter than a distance between the collection electrode and the signal output electrode among the curved electrodes.

Abstract: A semiconductor device, silicon photomultiplier, and sensor are described. The disclosed semiconductor device is disclosed to include a substrate, a photosensitive area provided on the substrate, the photosensitive area corresponding to an area in which an electrical signal is generated in response to light impacting the photosensitive area, at least one trench substantially surrounding the photosensitive area, the at least one trench extending at least partially into the substrate, and a resistor confined by the at least one trench and in electrical communication with the active area such that the resistor is configured to carry electrical signals generated by the photosensitive area to a metal contact.

Abstract: A semiconductor device, silicon photomultiplier, and sensor are described. The disclosed semiconductor device is disclosed to include a substrate, a photosensitive area provided on the substrate, the photosensitive area corresponding to an area in which an electrical signal is generated in response to light impacting the photosensitive area, at least one trench substantially surrounding the photosensitive area, the at least one trench extending at least partially into the substrate, and a resistor confined by the at least one trench and in electrical communication with the active area such that the resistor is configured to carry electrical signals generated by the photosensitive area to a metal contact.

Abstract: A semiconductor detector includes a plate-shaped semiconductor part, a signal output electrode for outputting a signal provided at one surface of the semiconductor part, a plurality of curved electrodes provided at the one surface of the semiconductor part and which have distances from the signal output electrode that are different from each other, and an arc-shaped collection electrode for collecting an electric charge generated at the semiconductor part. The plurality of curved electrodes are applied with voltage to generate in the semiconductor part a potential gradient in which a potential varies toward the signal output electrode. The collection electrode is located at a part of the semiconductor part between an adjacent pair of curved electrodes. The collection electrode is connected to a curved electrode located a distance from the signal output electrode shorter than a distance between the collection electrode and the signal output electrode among the curved electrodes.

Abstract: A charged particle beam device includes an electron source structured to generate an electron beam, the electron source being coupled to an electron column that at least partially houses a system structured to direct the electron beam toward a specimen positioned in a sample chamber to which the electron column is coupled, and an electron detector. The electron detector includes one or more assemblies positioned within the electron column or the sample chamber, each of the assemblies including an SiPM and a scintillator directly connected face-to-face to an active light sensing surface of the SiPM without a light transporting device being positioned in between the scintillator and the SiPM.

Abstract: A semiconductor sensor for detecting a radiation including a sensitive layer obtained in an inactive layer adapted to detect a light radiation, a portion thereof having a metal layer attached thereto, while on the remaining portion of the sensitive layer there is an overlapping scintillator. A bonding wire branches from said metal layer. Said sensor is shaped so that, according to a section of the sensor, said metal layer is at a lower height with respect to the scintillator crystal, so that the bonding wire does not interfere therewith. Such a result is obtained by tapering the thickness of said inactive layer and/or interposing a transparent layer between said sensitive layer and said scintillator crystal.