Abstract: In an embodiment a component includes a carrier, at least one optoelectronic part arranged on the carrier, the optoelectronic part configured to emit electromagnetic radiation, a frame arranged on the carrier and enclosing a part space, wherein the optoelectronic part is arranged in the part space, and wherein the frame comprises a reflector, and a lens arranged on the frame and at least partially covering an opening of the part space, wherein the reflector is configured to direct the electromagnetic radiation onto the lens, wherein the lens is configured to direct the electromagnetic radiation of the optoelectronic part, and wherein the lens comprises at least a partial pyramidal-shaped section on a first side face facing toward the optoelectronic part.

Abstract: In an embodiment a component includes a carrier, at least one optoelectronic part arranged on the carrier, the optoelectronic part configured to emit electromagnetic radiation, a frame arranged on the carrier and enclosing a part space, wherein the optoelectronic part is arranged in the part space, and wherein the frame comprises a reflector, and a lens arranged on the frame and at least partially covering an opening of the part space, wherein the reflector is configured to direct the electromagnetic radiation onto the lens, wherein the lens is configured to direct the electromagnetic radiation of the optoelectronic part, and wherein the lens comprises at least a partial pyramidal-shaped section on a first side face facing toward the optoelectronic part.

Abstract: A component with an optoelectronic part is disclosed. In an embodiment a component includes a carrier, at least one optoelectronic part arranged on the carrier, the part configured to emit electromagnetic radiation, a frame arranged on the carrier and enclosing a part space, wherein the part is arranged in the part space, and wherein the frame comprises a reflector and a lens arranged on the frame and at least partially covering an opening of the part space, wherein the lens is configured to direct the electromagnetic radiation of the part, wherein the lens comprises at least a partial pyramidal shape on a first side face facing toward the part, wherein the partial pyramidal shape of the lens comprises lateral faces, wherein the lateral faces meet one another via edges, and wherein the reflector is configured to direct radiation of the part onto the lens.

Abstract: The invention relates to an optoelectronic component comprising at least one optoelectronic semiconductor chip which is designed to generate or detect electromagnetic radiation, a carrier on which the semiconductor chip is arranged, a first encapsulation body into which the optoelectronic semiconductor chip is embedded, and a second encapsulation body, wherein the first encapsulation body has a first thickness above the semiconductor chip and has a second thickness laterally spaced from the semiconductor chip, the first thickness is less than the second thickness, a third thickness of the first encapsulation body between the first thickness and the second thickness is minimal, and the second encapsulation body is arranged on the first encapsulation body.

Abstract: An optoelectronic component including a first optoelectronic semiconductor chip configured to emit light includes a wavelength from an infrared spectral range, and a second optoelectronic semiconductor chip configured to emit light including a wavelength from a visible spectral range, wherein the optoelectronic component includes a reflector body including a top side and an underside, the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity.

Abstract: An optoelectronic component includes a first optoelectronic semiconductor chip configured to emit infrared light; a second optoelectronic semiconductor chip configured to emit visible light; a reflector body including a top side and an underside, wherein the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity, an optical lens arranged at the top side of the reflector body, and an optical waveguide extending through the reflector body from the underside to the top side, wherein the reflector body is arranged above the second optoelectronic semiconductor chip such that light emitted by the second optoelectronic semiconductor chip passes into the optical waveguide at the underside of the reflector body, and light may emerge from the optical waveguide at the top side of the reflector body.

Abstract: An optoelectronic component including a first optoelectronic semiconductor chip configured to emit light includes a wavelength from an infrared spectral range, and a second optoelectronic semiconductor chip configured to emit light including a wavelength from a visible spectral range, wherein the optoelectronic component includes a reflector body including a top side and an underside, the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity.

Abstract: The invention relates to an optoelectronic component comprising at least one optoelectronic semiconductor chip (2) which is designed to generate or detect electromagnetic radiation, a carrier (3) on which the semiconductor chip (2) is arranged, a first encapsulation body (4) into which the optoelectronic semiconductor chip (2) is embedded, and a second encapsulation body (6), wherein the first encapsulation body (4) has a first thickness (4a) above the semiconductor chip (2) and has a second thickness (4b) laterally spaced from the semiconductor chip (2), the first thickness (4a) is less than the second thickness (4b), a third thickness (4c) of the first encapsulation body (4) between the first thickness (4a) and the second thickness (4b) is minimal, and the second encapsulation body (6) is arranged on the first encapsulation body (4).

Abstract: A component with an optoelectronic part is disclosed. In an embodiment a component includes a carrier, at least one optoelectronic part arranged on the carrier, the part configured to emit electromagnetic radiation, a frame arranged on the carrier and enclosing a part space, wherein the part is arranged in the part space, and wherein the frame comprises a reflector and a lens arranged on the frame and at least partially covering an opening of the part space, wherein the lens is configured to direct the electromagnetic radiation of the part, wherein the lens comprises at least a partial pyramidal shape on a first side face facing toward the part, wherein the partial pyramidal shape of the lens comprises lateral faces, wherein the lateral faces meet one another via edges, and wherein the reflector is configured to direct radiation of the part onto the lens.

Abstract: In an embodiment the optical component includes an optoelectronic semiconductor chip including a radiation emission face, a deflection element configured to deflect electromagnetic radiation emitted by the optoelectronic semiconductor chip in a main emission direction which forms an angle deviating from 90° with the radiation emission face, wherein the deflection element is configured as a prism structure and an optical lens having an optical axis, wherein the optical axis forms an angle deviating from 90° with the radiation emission face.

Abstract: An optoelectronic component is disclosed. In an embodiment the optical component includes an optoelectronic semiconductor chip including a radiation emission face, a deflection element configured to deflect electromagnetic radiation emitted by the optoelectronic semiconductor chip in a main emission direction which forms an angle deviating from 90° with the radiation emission face, wherein the deflection element is configured as a prism structure and an optical lens having an optical axis, wherein the optical axis forms an angle deviating from 90° with the radiation emission face.